Rds(on)=0.18鈩?/div>
5" Wafer
Electrical Characteristics ( Wafer Form )
Parameter
V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
T
J
T
STG
Description
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Leakage
Operating Junction and
Storage Temperature Range
Guaranteed (Min/Max)
200V Min.
0.180鈩?Max.
2.3V Min., 4.0V Max.
25碌A(chǔ) Max.
鹵 10碌A(chǔ) Max.
125擄C Max.
Test Conditions
V
GS
= 0V, I
D
= 100碌A(chǔ)
V
GS
= 10V, I
D
= 10A
V
DS
= V
GS
, I
D
= 250碌A(chǔ)
V
DS
= 200V, V
GS
= 0V, T
J
= 25擄C
V
GS
= 鹵20V
Mechanical Data
Nominal Backmetal Composition, Thickness:
Nominal Front Metal Composition, Thickness:
Dimensions:
Wafer Diameter:
Wafer thickness:
Relevant Die Mechanical Dwg. Number
Minimum Street Width
Reject Ink Dot Size
Recommended Storage Environment:
Recommended Die Attach Conditions
Reference Standard IR packaged part ( for design ) : IRF640
Cr-NiV-Ag ( 1kA擄-2kA擄-2.5kA擄 )
99% Al, 1% Si (0.004 mm)
0.147" x 0.201" ( 3.73mm x 5.11 mm)
125mm with 100 flat
0.375mm + / -0.020mm
01-5331
0.084 mm
0.51mm Diameter Minimum
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300C
Die Outline
3/23/99
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