PD- 93929
PROVISIONAL
IRFBL17N50L
HEXFET
廬
Power MOSFET
SMPS MOSFET
Applications
l
Telecom and Data-Com off-Line SMPS
l
Motor Control
l
UninterruptIble Power Supply
Benefits
l
Low On-Resistance
l
High Speed Switching
l
Low Gate Drive Current Due to Improved
Gate Charge Characteristics
l
Built in Fast Recovery Diode
l
Improved Avalanche Ruggedness and
Dynamic dv/dt, Fully Characterized
Avalanche Voltage and Current
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
聛
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
聝
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
V
DSS
500V
R
DS(on)
0.28鈩?/div>
I
D
17A
Super D
2
pak
TM
Max.
17
10
68
200
1.6
鹵 30
5.0
-55 to + 150
260
Units
A
W
W/擄C
V
V/ns
擄C
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
聛
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
17
鈥撯€撯€?鈥撯€撯€?/div>
showing the
A
G
integral reverse
鈥撯€撯€?鈥撯€撯€?/div>
68
S
p-n junction diode.
鈥撯€撯€?鈥撯€撯€?1.5
V
T
J
= 25擄C, I
S
= 17A, V
GS
= 0V
聞
鈥撯€撯€?180 鈥撯€撯€?/div>
ns
T
J
= 125擄C, I
F
= 17A
鈥撯€撯€?420 鈥撯€撯€?/div>
nC di/dt = 100A/碌s
聞
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Typical SMPS Topologies
l
Zero Voltage Switching Full and Half Bridge Circuits
www.irf.com
1
6/2/00
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