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IRFBF20S Datasheet

  • IRFBF20S

  • Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.7A)

  • 10頁

  • IRF

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上傳產(chǎn)品規(guī)格書

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PD - 9.1665
PRELIMINARY
l
l
l
l
l
l
l
IRFBF20S/L
HEXFET
廬
Power MOSFET
D
Surface Mount (IRFBF20S)
Low-profile through-hole (IRFBF20L)
Available in Tape & Reel (IRFBF20S)
Dynamic dv/dt Rating
150擄C Operating Temperature
Fast Switching
Fully Avalanche Rated
V
DSS
= 900V
R
DS(on)
= 8.0鈩?/div>
G
I
D
= 1.7A
S
Description
Third generation HEXFETs from international Rectifier provide the designer with the
best combination of fast switching, ruggedized device design, low on-resistance and
cost-effectiveness.
The D
2
Pak is a surface mount power package capable ofthe accommodatingdie sizes
up to HEX-4. It provides the highest power capability and the lowest possible on-
resistance in any existing surface mount package. The D
2
Pak is suitable for high
current applications because of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount application. The through-hole version
(IRFBF20L) is available for low-profile applications.
D 2 Pak
T O -2 6 2
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
A
= 25擄C
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V聟
Continuous Drain Current, V
GS
@ 10V聟
Pulsed Drain Current
聛聟
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy聜聟
Avalanche Current聛
Repetitive Avalanche Energy聛
Peak Diode Recovery dv/dt
聝聟
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
1.7
1.1
6.8
3.1
54
0.43
鹵 20
180
1.7
5.4
1.5
-55 to + 150
300 (1.6mm from case )
Units
A
W
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max.
2.3
40
Units
擄C/W
7/10/97

IRFBF20S 產(chǎn)品屬性

  • IRFBF20S,L

  • 1,000

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • -

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 900V

  • 1.7A

  • 8 歐姆 @ 1A，10V

  • 4V @ 250µA

  • 38nC @ 10V

  • 490pF @ 25V

  • 3.1W

  • 表面貼裝

  • TO-263-3，D²Pak（2 引線+接片），TO-263AB

  • D2PAK

  • 管件

  • *IRFBF20S

IRFBF20S相關(guān)型號PDF文件下載

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