IRFBC30ASTRL Datasheet

IC型號：
IRFBC30ASTRL
PDF描述：
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3.6A I(D) ...
文件大小：
180.77KB
PDF頁數(shù)：
10頁
芯片廠家：
ETC

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上傳產(chǎn)品規(guī)格書

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PD- 91890B

SMPS MOSFET

IRFBC30AS/L

HEXFET

廬

Power MOSFET

Applications

Switch Mode Power Supply (SMPS)

Uninterruptable Power Supply

High speed power switching

Benefits

Low Gate Charge Qg results in Simple

Drive Requirement

Improved Gate, Avalanche and dynamic

dv/dt Ruggedness

Fully Characterized Capacitance and

Avalanche Voltage and Current

Effective Coss specified (See AN 1001)

DSS

600V

Rds(on) max

2.2鈩?/div>

3.6A

D 2 Pak

T O -26 2

Absolute Maximum Ratings

Parameter

@ T

= 25擄C

@ T

= 100擄C

= 25擄C

dv/dt

STG

Continuous Drain Current, V

@ 10V聠

Continuous Drain Current, V

@ 10V聠

Pulsed Drain Current

聛聠

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt

聝聠

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Max.

3.6

2.3

0.69

鹵 30

7.0

-55 to + 150

300 (1.6mm from case )

Units

W/擄C

V/ns

擄C

Typical SMPS Topology:

Single transistor Flyback

Notes

聛

through

聟

are on page 10

www.irf.com

5/4/00

數(shù)據(jù)列表
IRFBC30AS,AL, SiHFBC30AS,AL
標(biāo)準(zhǔn)包裝
800
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 單
系列
-
FET 型
MOSFET N 通道，金屬氧化物
FET 特點
標(biāo)準(zhǔn)型
漏極至源極電壓(Vdss)
600V
電流 - 連續(xù)漏極(Id) @ 25° C
3.6A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
2.2 歐姆 @ 2.2A，10V
Id 時的 Vgs(th)（最大）
4.5V @ 250µA
閘電荷(Qg) @ Vgs
23nC @ 10V
輸入電容 (Ciss) @ Vds
510pF @ 25V
功率 - 最大
74W
安裝類型
表面貼裝
封裝/外殼
TO-263-3，D²Pak（2 引線+接片），TO-263AB
供應(yīng)商設(shè)備封裝
D2PAK
包裝
帶卷 (TR)

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IRFBC30ASTRL Datasheet

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