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IRFBA1404P Datasheet

  • IRFBA1404P

  • Power MOSFET(Vdss=40V, Rds(on)=3.7mohm, Id=206A)

  • 9頁

  • IRF

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PD - 93806
AUTOMOTIVE MOSFET
Typical Applications
l
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IRFBA1404P
HEXFET
廬
Power MOSFET
D
Anti-lock Braking Systems (ABS)
Electric Power Steering (EPS)
Electric Braking
Radiator Fan Control
Advanced Process Technology
Ultra Low On-Resistance
Increase Current Handling Capability
175擄C Operating Temperature
Fast Switching
Dynamic dv/dt Rating
Repetitive Avalanche Allowed up to Tjmax
V
DSS
= 40V
R
DS(on)
= 3.7m鈩?/div>
Benefits
G
I
D
= 206A聠
S
Description
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET
廬
Power MOSFETs utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of this MOSFET are a 175
o
C junction operating
temperature, fast switching speed and improved ruggedness in
single and repetitive avalanche. The Super-220
TM
is a package that
has been designed to have the same mechanical outline and pinout
as the industry standard TO-220 but can house a considerably
larger silicon die. The result is significantly increased current
handling capability over both the TO-220 and the much larger TO-
247 package. The combination of extremely low on-resistance
silicon and the Super-220
TM
package makes it ideal to reduce the
component count in multiparalled TO-220 applications, reduce
system power dissipation, upgrade existing designs or have TO-247
performance in a TO-220 outline. This package has been designed
to meet automotive, Q101, qualification standard.
These benefits make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety of other
applications.
Super-220鈩?/div>
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
聛
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy聜
Avalanche Current聛
Repetitive Avalanche Energy聛
Peak Diode Recovery dv/dt
聝
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Recommended clip force
Max.
206聠
145聠
650
300
2.0
鹵 20
See Fig.12a, 12b, 15, 16
30
5.0
-40 to + 175
-55 to + 175
300 (1.6mm from case )
20
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
N
www.irf.com
1
10/24/00

IRFBA1404P 產(chǎn)品屬性

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • HEXFET®

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 40V

  • 206A

  • 3.7 毫歐 @ 95A，10V

  • 4V @ 250µA

  • 200nC @ 10V

  • 7360pF @ 25V

  • 300W

  • 通孔

  • Super-220?-3（直引線）

  • SUPER-220?（TO-273AA）

  • 管件

  • *IRFBA1404P

IRFBA1404P相關(guān)型號PDF文件下載

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    Power MOSFET(Vdss=800V, Rds(on)=6.5ohm, Id=1.8A)
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