音影先锋亚洲天堂网|电影世界尽头的爱完整版播放|国产 熟女 91|高清无码免费观看欧美日韩|韩国一区二区三区黄色录像|美女亚洲加勒比在线|亚洲综合网 开心五月|7x成人在线入口|成人网站免费日韩毛片区|国产黄片?一级?二级?三级

IRFB9N60 Datasheet

  • IRFB9N60

  • Power MOSFET(Vdss=600V, Rds(on)=0.75ohm, Id=9.2A)

  • 8頁

  • IRF

掃碼查看芯片數(shù)據(jù)手冊

上傳產(chǎn)品規(guī)格書

PDF預(yù)覽

PD - 91811
IRFB9N60A
HEXFET
廬
Power MOSFET
l
l
l
l
l
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Fast Switching
Ease of Paraleling
Simple Drive Requirements
D
V
DSS
= 600V
G
S
R
DS(on)
= 0.75鈩?/div>
I
D
= 9.2A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
聛
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy聜
Avalanche Current聛
Repetitive Avalanche Energy聛
Peak Diode Recovery dv/dt
聝
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
9.2
5.8
37
170
1.3
鹵 30
290
9.2
17
5.0
-55 to + 150
300 (1.6mm from case )
10 lbf鈥n (1.1N鈥)
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃CS
R
胃JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
鈥撯€撯€?/div>
0.50
鈥撯€撯€?/div>
Max.
0.75
鈥撯€撯€?/div>
62
Units
擄C/W
www.irf.com
1
10/7/98

IRFB9N60相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    Power MOSFET(Vdss=200V, Rds(on)max=0.040ohm, Id=56A)
    IRF
  • 英文版
    Power MOSFET(Vdss=200V, Rds(on)max=0.040ohm, Id=56A)
    IRF [Inter...
  • 英文版
    Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A)
    IRF
  • 英文版
    Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A)
    IRF [Inter...
  • 英文版
    Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=3.6A)
    IRF
  • 英文版
    N - CHANNEL 600V - 1.8 ohm - 3.6A - TO-220 PowerMESH]II MOS...
    STMICROELECTRONICS
  • 英文版
    Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=3.6A)
    IRF [Inter...
  • 英文版
    N - CHANNEL 600V - 1.8 ohm - 3.6A - TO-220 PowerMESH]II MOS...
    STMICROELECTRON...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3.2A I(D) ...
    ETC
  • 英文版
    Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A)
    IRF
  • 英文版
    6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFET...
    HARRIS
  • 英文版
    6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET
    INTERSIL
  • 英文版
    N - CHANNEL 600V - 1.0ohm - 6.2 A - TO-220 PowerMESH] MOSFET
    STMICROELECTRONICS
  • 英文版
    Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A)
    IRF [Inter...
  • 英文版
    N - CHANNEL 600V - 1.0ohm - 6.2 A - TO-220 PowerMESH] MOSFET
    STMICROELECTRON...
  • 英文版
    6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET
    INTERSIL [...
  • 英文版
    6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFET...
    HARRIS [Ha...
  • 英文版
    6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFET...
    HARRIS
  • 英文版
    6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFET...
    HARRIS [Ha...
  • 英文版
    Power MOSFET(Vdss=800V, Rds(on)=6.5ohm, Id=1.8A)
    IRF

掃碼下載APP，
一鍵連接廣大的電子世界。

在線人工客服

買家服務(wù)：
賣家服務(wù)：
技術(shù)客服：

0571-85317607

網(wǎng)站技術(shù)支持

13606545031

客服在線時間周一至周五
9:00-17:30

關(guān)注官方微信號，
第一時間獲取資訊。

建議反饋

聯(lián)系人：

聯(lián)系方式：

按住滑塊，拖拽到最右邊
>>
感謝您向阿庫提出的寶貴意見，您的參與是維庫提升服務(wù)的動力！意見一經(jīng)采納，將有感恩紅包奉上哦！