IRFB4233PBF Datasheet

IC型號(hào)：
IRFB4233PBF
PDF描述：
Energy Recovery & Pass switch applications in Plasma Display...
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290.07KB
PDF頁(yè)數(shù)：
8頁(yè)
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IRF

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PD - 97004

PDP SWITCH

Features

Advanced process technology

Key parameters optimized for PDP Sustain,

Energy Recovery and Pass Switch Applications

Low E

PULSE

rating to reduce power dissipation

in PDP Sustain, Energy Recovery and Pass

Switch Applications

Low Q

for fast response

High repetitive peak current capability for

reliable operation

Short fall & rise times for fast switching

175擄C operating junction temperature for

improved ruggedness

Repetitive avalanche capability for robustness

and reliability

IRFB4233PbF

Key Parameters

230

276

114

175

擄C

min

DS (Avalanche)

typ.

DS(ON)

typ. @ 10V

max @ T

= 100擄C

max

TO-220AB

Description

This

HEXFET

廬

Power MOSFET

is specifically designed for Sustain; Energy Recovery & Pass switch

applications in Plasma Display Panels. This

MOSFET

utilizes the latest processing techniques to achieve

low on-resistance per silicon area and low E

PULSE

rating. Additional features of this

MOSFET

are 175擄C

operating junction temperature and high repetitive peak current capability. These features combine to

make this

MOSFET

a highly efficient, robust and reliable device for PDP driving applications.

Absolute Maximum Ratings

Parameter

@ T

= 25擄C

@ T

= 100擄C

@ T

= 100擄C

= 25擄C

= 100擄C

STG

Gate-to-Source Voltage

Continuous Drain Current, V

@ 10V

Continuous Drain Current, V

@ 10V

Pulsed Drain Current

Repetitive Peak Current

Power Dissipation

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Soldering Temperature for 10 seconds

Mounting Torque, 6-32 or M3 Screw

300

10lbxin (1.1Nxm)

Max.

鹵30

220

114

370

190

2.5

-40 to + 175

Units

W/擄C

擄C

Thermal Resistance

Parameter

胃JC

胃CS

胃JA

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

Typ.

鈥撯€撯€?/div>

0.50

鈥撯€撯€?/div>

Max.

0.402

鈥撯€撯€?/div>

Units

擄C/W

Notes

聛

through

聠

are on page 8

www.irf.com

6/8/05

標(biāo)準(zhǔn)包裝
50
類(lèi)別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 單
系列
HEXFET®
FET 型
MOSFET N 通道，金屬氧化物
FET 特點(diǎn)
標(biāo)準(zhǔn)型
漏極至源極電壓(Vdss)
230V
電流 - 連續(xù)漏極(Id) @ 25° C
56A
開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C
37 毫歐 @ 28A，10V
Id 時(shí)的 Vgs(th)（最大）
5V @ 250µA
閘電荷(Qg) @ Vgs
170nC @ 10V
輸入電容 (Ciss) @ Vds
5510pF @ 25V
功率 - 最大
370W
安裝類(lèi)型
通孔
封裝/外殼
TO-220-3
供應(yīng)商設(shè)備封裝
TO-220AB
包裝
管件

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