PD - 95855
SMPS MOSFET
Applications
l
l
l
l
IRFB16N50K
HEXFET
廬
Power MOSFET
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency
Circuits
Low Gate Charge Qg results in Simple Drive
Requirement
Improved Gate, Avalanche and Dynamic dv/dt
Ruggedness
Fully Characterized Capacitance and Avalanche
Voltage and Current
Low R
DS(on)
V
DSS
500V
R
DS(on)
typ.
285m
:
I
D
17A
Benefits
l
l
l
l
G
S
D
TO-220AB
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
Continuous Drain Current, VGS @ 10V
I
D
@ T
C
= 100擄C Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
DM
Max.
17
11
68
280
2.3
鹵 30
8.0
-55 to + 150
Units
A
W
W/擄C
V
V/ns
擄C
c
P
D
@T
C
= 25擄C
V
GS
dv/dt
T
J
T
STG
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
e
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
300 (1.6mm from case )
10 lbf in (1.1N m)
y
y
Avalanche Characteristics
E
AS
I
AR
E
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
脙
c
d
Typ.
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Max.
310
17
28
Units
mJ
A
mJ
Repetitive Avalanche Energy
c
Thermal Resistance
Parameter
R
胃JC
R
胃CS
R
胃JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
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0.50
鈥撯€撯€?/div>
Max.
0.44
鈥撯€撯€?/div>
62
Units
擄C/W
www.irf.com
1
03/11/04
IRFB16N50K 產(chǎn)品屬性
1,000
分離式半導(dǎo)體產(chǎn)品
FET - 單
-
MOSFET N 通道，金屬氧化物
標準型
500V
17A
350 毫歐 @ 10A，10V
5V @ 250µA
89nC @ 10V
2210pF @ 25V
280W
通孔
TO-220-3
TO-220AB
管件
*IRFB16N50K
IRFB16N50K相關(guān)型號PDF文件下載
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