IRFAC40 Datasheet

IC型號(hào)：
IRFAC40
PDF描述：
6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFET...
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Semiconductor

IRFAC40,

IRFAC42

6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm,

N-Channel Power MOSFETs

Description

These are N-Channel enhancement mode silicon gate

power 鏗乪ld effect transistors. They are advanced power

MOSFETs designed, tested, and guaranteed to withstand a

speci鏗乪d level of energy in the breakdown avalanche mode

of operation. All of these power MOSFETs are designed for

applications such as switching regulators, switching conver-

tors, motor drivers, relay drivers, and drivers for high power

bipolar switching transistors requiring high speed and low

gate drive power. These types can be operated directly from

integrated circuits.

Formerly Developmental Type TA17426.

BRAND

IRFAC40

IRFAC42

January 1998

鈥?6.2A and 5.4A, 600V

鈥?r

DS(ON)

= 1.2鈩?and 1.6鈩?/div>

鈥?Repetitive Avalanche Energy Rated

鈥?Simple Drive Requirements

鈥?Ease of Paralleling

鈥?Related Literature

- TB334, 鈥淕uidelines for Soldering Surface Mount

Components to PC Boards鈥?/div>

Ordering Information

PART NUMBER

IRFAC40

IRFAC42

PACKAGE

TO-204AA

Symbol

NOTE: When ordering, include the entire part number.

Packaging

JEDEC TO-204AA

DRAIN

(FLANGE)

SOURCE (PIN 2)

GATE (PIN 1)

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

漏

Harris Corporation 1997

File Number

2156.2

5-1

型號(hào)

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