音影先锋亚洲天堂网|电影世界尽头的爱完整版播放|国产 熟女 91|高清无码免费观看欧美日韩|韩国一区二区三区黄色录像|美女亚洲加勒比在线|亚洲综合网 开心五月|7x成人在线入口|成人网站免费日韩毛片区|国产黄片?一级?二级?三级

IRF9952 Datasheet

  • IRF9952

  • Power MOSFET(Vdss=+-30V)

  • 10頁

  • IRF

掃碼查看芯片數(shù)據(jù)手冊

上傳產(chǎn)品規(guī)格書

PDF預覽

PD - 9.1561A
PRELIMINARY
l
l
l
l
l
l
IRF9952
HEXFET
廬
Power MOSFET
D1
D1
D2
D2
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Very Low Gate Charge and
Switching Losses
Fully Avalanche Rated
S1
G1
S2
G2
N -C H A N N E L M O S F E T
1
8
N-Ch P-Ch
V
DSS
30V
-30V
2
7
3
6
4
5
P -C H A N N E L M O S F E T
R
DS(on)
0.10鈩?0.25鈩?/div>
T o p V iew
Recommended upgrade: IRF7309 or IRF7319
Lower profile/smaller equivalent: IRF7509
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
S O -8
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
聟
T
A
= 25擄C
T
A
= 70擄C
V
DS
V
GS
I
D
I
DM
I
S
P
D
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
44
2.0
3.5
2.8
16
1.7
N-Channel
Maximum
P-Channel
30
鹵 20
-2.3
-1.8
-10
-1.3
2.0
1.3
57
-1.3
0.25
Units
V
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
T
A
= 25擄C
Maximum Power Dissipation
聟
T
A
= 70擄C
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
聜
Junction and Storage Temperature Range
A
W
mJ
A
mJ
V/ ns
5.0
-5.0
-55 to + 150 擄C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
聟
Symbol
R
胃JA
Limit
62.5
Units
擄C/W
8/25/97

IRF9952 產(chǎn)品屬性

  • 95

  • 分離式半導體產(chǎn)品

  • FET - 陣列

  • HEXFET®

  • N 和 P 溝道

  • 邏輯電平門

  • 30V

  • 3.5A，2.3A

  • 100 毫歐 @ 2.2A，10V

  • 1V @ 250µA

  • 14nC @ 10V

  • 190pF @ 15V

  • 2W

  • 表面貼裝

  • 8-SOIC（0.154"，3.90mm 寬）

  • 8-SO

  • 管件

  • *IRF9952

IRF9952相關型號PDF文件下載

掃碼下載APP，
一鍵連接廣大的電子世界。

在線人工客服

買家服務：
賣家服務：
技術客服：

0571-85317607

網(wǎng)站技術支持

13606545031

客服在線時間周一至周五
9:00-17:30

關注官方微信號，
第一時間獲取資訊。

建議反饋

聯(lián)系人：

聯(lián)系方式：

按住滑塊，拖拽到最右邊
>>
感謝您向阿庫提出的寶貴意見，您的參與是維庫提升服務的動力！意見一經(jīng)采納，將有感恩紅包奉上哦！