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IRF9540RF1S9540SM Datasheet

  • IRF9540RF1S9540SM

  • 19A 100V 0.200 Ohm P-Channel Power MOSFETs(100.75 k)

  • 7頁

  • ETC

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IRF9540, RF1S9540SM
Data Sheet
January 2002
19A, 100V, 0.200 Ohm, P-Channel Power
MOSFETs
These are P-Channel enhancement mode silicon gate power
鏗乪ld effect transistors. They are advanced power MOSFETs
designed, tested, and guaranteed to withstand a speci鏗乪d
level of energy in the breakdown avalanche mode of
operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. They can be operated directly from
integrated circuits.
Formerly Developmental Type TA17521.
Features
鈥?19A, 100V
鈥?r
DS(ON)
= 0.200
鈩?/div>
鈥?Single Pulse Avalanche Energy Rated
鈥?SOA is Power Dissipation Limited
鈥?Nanosecond Switching Speeds
鈥?Linear Transfer Characteristics
鈥?High Input Impedance
鈥?Related Literature
- TB334 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Ordering Information
PART NUMBER
IRF9540
RF1S9540SM
PACKAGE
TO-220AB
TO-263AB
BRAND
IRF9540
RF1S9540
Symbol
D
G
NOTE: When ordering, use the entire part number. Add the suf鏗亁 9A to
obtain the TO-263AB variant in the tape and reel, i.e., RF1S9540SM9A.
S
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
DRAIN
(FLANGE)
GATE
SOURCE
JEDEC TO-263AB
漏2002 Fairchild Semiconductor Corporation
IRF9540, RF1S9540SM Rev. B

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