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IRF9230 Datasheet

  • IRF9230

  • TRANSISTORS P-CHANNEL(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A)

  • 7頁

  • IRF

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上傳產(chǎn)品規(guī)格書

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PD - 90548C
IRF9230
REPETITIVE A ALANCHE AND dv/dt RATED
V
JANTX2N6806
餂?/div>
HEXFET TRANSISTORS
JANTXV2N6806
THRU-HOLE (TO-204AA/AE)
[REF:MIL-PRF-19500/562]
200V, P-CHANNEL
Product Summary
Part Number
IRF9230
B
VDSS
-200V
R
DS(on)
0.80
鈩?/div>
I
D
-6.5A
The HEXFET
餂?/div>
technology is the key to International
Rectifier鈥檚 advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
鈥淪tate of the Art鈥?design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of parelleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
TO-3
Features:
n
n
n
n
n
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
Absolute Maximum Ratings
Parameter
ID @ VGS = 0V, TC = 25擄C
ID @ VGS = 0V, TC = 100擄C
I DM
PD @ TC = 25擄C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
鉃€
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
鉃?/div>
Avalanche Current
鉃€
Repetitive Avalanche Energy
鉃€
Peak Diode Recovery dv/dt
鉃?/div>
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
-6.5
-4.0
-28
75
0.60
鹵20
66
-6.5
7.5
-5.0
-55 to 150
300 (0.063 in. (1.6mm) from case for 10s)
11.5 (typical)
W
W/擄C
Units
A
V
mJ
A
mJ
V/ns
o
C
g
www.irf.com
1
01/22/01

IRF9230 產(chǎn)品屬性

  • 100 ns

  • 50 ns

  • 8 → 31 常閉 V @ -10

  • 700 pF V @ -25

  • 通孔

  • 26.67mm

  • TO-3

  • 39.95 x 26.67 x 7.87mm

  • 2

  • -55 °C

  • 75 W

  • ±20 V

  • -200 V

  • 0.92

  • -6.5 A

  • +150 °C

  • 1

  • 功率 MOSFET

  • P

  • 單

  • 39.95mm

  • 7.87mm

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