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IRF9150 Datasheet

  • IRF9150

  • -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET

  • 7頁

  • INTERSIL   INTERSIL

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IRF9150
Data Sheet
February 1999
File Number
2280.3
-25A, -100V, 0.150 Ohm, P-Channel Power
MOSFET
This P-Channel enhancement mode silicon gate power 鏗乪ld
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a speci鏗乪d level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA49230.
Features
鈥?-25A, -100V
鈥?r
DS(ON)
= 0.150鈩?/div>
鈥?Single Pulse Avalanche Energy Rated
鈥?SOA is Power Dissipation Limited
鈥?Nanosecond Switching Speeds
鈥?Linear Transfer Characteristics
鈥?High Input Impedance
Symbol
D
Ordering Information
PART NUMBER
IRF9150
PACKAGE
TO-204AE
BRAND
IRF9150
G
S
NOTE: When ordering, use the entire part number.
Packaging
JEDEC TO-204AE
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
5-20
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
漏
Intersil Corporation 1999

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