IRF840 Datasheet

IC型號：
IRF840
PDF描述：
PowerMOS transistor Avalanche energy rated
文件大?。?/label>
62.33KB
PDF頁數(shù)：
7頁
芯片廠家：
PHILIPS

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Philips Semiconductors

Product specification

PowerMOS transistor

Avalanche energy rated

FEATURES

鈥?Repetitive Avalanche Rated

鈥?Fast switching

鈥?High thermal cycling performance

鈥?Low thermal resistance

IRF840

SYMBOL

QUICK REFERENCE DATA

DSS

= 500 V

= 8.5 A

DS(ON)

鈮?/div>

0.85

鈩?/div>

GENERAL DESCRIPTION

N-channel, enhancement mode

field-effect

power

transistor,

intended for use in off-line switched

mode power supplies, T.V. and

computer monitor power supplies,

d.c. to d.c. converters, motor control

circuits and general purpose

switching applications.

The IRF840 is supplied in the

SOT78 (TO220AB) conventional

leaded package.

PINNING

tab

gate

drain

source

drain

DESCRIPTION

SOT78 (TO220AB)

tab

1 23

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

DSS

DGR

, T

stg

Drain-source voltage

Drain-gate voltage

Gate-source voltage

Continuous drain current

Pulsed drain current

Total dissipation

Operating junction and

storage temperature range

CONDITIONS

= 25 藲C to 150藲C

= 25 藲C to 150藲C; R

= 20 k鈩?/div>

= 25 藲C; V

= 10 V

= 100 藲C; V

= 10 V

= 25 藲C

MIN.

- 55

MAX.

500

鹵

8.5

5.4

147

150

UNIT

藲C

AVALANCHE ENERGY LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

Non-repetitive avalanche

energy

CONDITIONS

MIN.

MAX.

531

UNIT

Unclamped inductive load, I

= 7.4 A;

= 0.22 ms; T

prior to avalanche = 25藲C;

鈮?/div>

50 V; R

= 50

鈩?

= 10 V; refer

to fig:17

Repetitive avalanche energy

= 8.5 A; t

= 2.5

碌s;

prior to

avalanche = 25藲C; R

= 50

鈩?

= 10 V;

refer to fig:18

Repetitive and non-repetitive

avalanche current

, I

8.5

pulse width and repetition rate limited by T

max.

March 1999

Rev 1.000

標準包裝
1,000
類別
分離式半導體產(chǎn)品
家庭
FET - 單
系列
-
FET 型
MOSFET N 通道，金屬氧化物
FET 特點
標準型
漏極至源極電壓(Vdss)
500V
電流 - 連續(xù)漏極(Id) @ 25° C
8A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
850 毫歐 @ 4.8A，10V
Id 時的 Vgs(th)（最大）
4V @ 250µA
閘電荷(Qg) @ Vgs
63nC @ 10V
輸入電容 (Ciss) @ Vds
1300pF @ 25V
功率 - 最大
125W
安裝類型
通孔
封裝/外殼
TO-220-3
供應(yīng)商設(shè)備封裝
TO-220AB
包裝
管件
其它名稱
*IRF840IRF840IR

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