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IRF840LCL Datasheet

  • IRF840LCL

  • Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)

  • 10頁

  • IRF

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上傳產(chǎn)品規(guī)格書

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PD- 93766
IRF840LCS
IRF840LCL
HEXFET
廬
Power MOSFET
l
l
l
l
l
l
Ultra Low Gate Charge
Reduced Gate Drive Requirement
Enhanced 30V V
GS
Rating
Reduced C
ISS
, C
OSS
, C
RSS
Extremely High Frequency Operation
Repetitive Avalanche Rated
D
V
DSS
= 500V
G
S
R
DS(on)
= 0.85鈩?/div>
I
D
= 8.0A
Description
This new series of low charge HEXFET
廬
power MOSFETs
achieve significant lower gate charge over conventional
MOSFETs. Utilizing the new LCDMOS (low charge
device MOSFETs) technology, the device improvements
are achieved without added product cost, allowing for
reduce gate drive requirements and total system savings.
In addition, reduced switching losses and improved
efficiency and achievable in a variety of high frequency
applications. Frequencies of a few MHz at high current
are possible using the new low charge MOSFETs.
These device improvements combined with the proven
ruggedness and reliability that characterize of HEXFET
power MOSFETs offer the designer a new power
transistor standard for switching applications.
D
2
Pak
IRF840LCS
TO-262
IRF840LCL
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
A
= 25擄C
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V聟
Continuous Drain Current, V
GS
@ 10V聟
Pulsed Drain Current
聛聟
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy鈥毬?/div>
Avalanche Current聛
Repetitive Avalanche Energy聛
Peak Diode Recovery dv/dt
聝聟
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
8.0
5.1
28
3.1
125
1.0
鹵 30
510
8.0
13
3.5
-55 to + 150
300 (1.6mm from case)
Units
A
W
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JA
Junction-to-Case
Junction-to-Ambient (PCB Mounted,steady-state)**
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max.
1.0
40
Units
擄C/W
www.irf.com
1
1/3/2000

IRF840LCL 產(chǎn)品屬性

  • IRF840LCSPBF, LCLPBF

  • 1,000

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • -

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 500V

  • 8A

  • 850 毫歐 @ 4.8A，10V

  • 4V @ 250µA

  • 39nC @ 10V

  • 1100pF @ 25V

  • 3.1W

  • 通孔

  • TO-262-3，長引線，I²Pak，TO-262AA

  • I2PAK

  • 管件

  • *IRF840LCL

IRF840LCL相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS
    STMICROELECTRONICS
  • 英文版
    N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS
    STMICROELECTRON...
  • 英文版
    N - CHANNEL 500V - 2.5ohm - 2.5 A - TO-220 PowerMESH] MOSFET
    STMICROELECTRONICS
  • 英文版
    N-CHANNEL Enhancement-Mode Silicon Gate TMOS
    MOTOROLA
  • 英文版
    2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET
    INTERSIL
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 450 V/500 V
    FAIRCHILD
  • 英文版
    Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=2.5A)
    IRF
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG
  • 英文版
    2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET
    INTERSIL [...
  • 英文版
    Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=2.5A)
    IRF [Inter...
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 450 V/500 V
    FAIRCHILD ...
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG [S...
  • 英文版
    N-CHANNEL Enhancement-Mode Silicon Gate TMOS
    MOTOROLA [...
  • 英文版
    N - CHANNEL 500V - 2.5ohm - 2.5 A - TO-220 PowerMESH] MOSFET
    STMICROELECTRON...
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 450 V/500 V
    FAIRCHILD
  • 英文版
    N-CHANNEL Enhancement-Mode Silicon Gate TMOS
    MOTOROLA
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 450 V/500 V
    FAIRCHILD ...
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG [S...
  • 英文版
    N-CHANNEL Enhancement-Mode Silicon Gate TMOS
    MOTOROLA [...

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