IRF840LCL Datasheet

IC型號(hào)：
IRF840LCL
PDF描述：
Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)
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PD- 93766

IRF840LCS

IRF840LCL

HEXFET

廬

Power MOSFET

Ultra Low Gate Charge

Reduced Gate Drive Requirement

Enhanced 30V V

Rating

Reduced C

ISS

, C

OSS

, C

RSS

Extremely High Frequency Operation

Repetitive Avalanche Rated

DSS

= 500V

DS(on)

= 0.85鈩?/div>

= 8.0A

Description

This new series of low charge HEXFET

廬

power MOSFETs

achieve significant lower gate charge over conventional

MOSFETs. Utilizing the new LCDMOS (low charge

device MOSFETs) technology, the device improvements

are achieved without added product cost, allowing for

reduce gate drive requirements and total system savings.

In addition, reduced switching losses and improved

efficiency and achievable in a variety of high frequency

applications. Frequencies of a few MHz at high current

are possible using the new low charge MOSFETs.

These device improvements combined with the proven

ruggedness and reliability that characterize of HEXFET

power MOSFETs offer the designer a new power

transistor standard for switching applications.

Pak

IRF840LCS

TO-262

IRF840LCL

Absolute Maximum Ratings

Parameter

@ T

= 25擄C

@ T

= 100擄C

= 25擄C

dv/dt

STG

Continuous Drain Current, V

@ 10V聟

Continuous Drain Current, V

@ 10V聟

Pulsed Drain Current

聛聟

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy鈥毬?/div>

Avalanche Current聛

Repetitive Avalanche Energy聛

Peak Diode Recovery dv/dt

聝聟

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Max.

8.0

5.1

3.1

125

1.0

鹵 30

510

8.0

3.5

-55 to + 150

300 (1.6mm from case)

Units

W/擄C

V/ns

擄C

Thermal Resistance

Parameter

胃JC

胃JA

Junction-to-Case

Junction-to-Ambient (PCB Mounted,steady-state)**

Typ.

鈥撯€撯€?/div>

Max.

1.0

Units

擄C/W

www.irf.com

1/3/2000

數(shù)據(jù)列表
IRF840LCSPBF, LCLPBF
標(biāo)準(zhǔn)包裝
1,000
類(lèi)別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 單
系列
-
FET 型
MOSFET N 通道，金屬氧化物
FET 特點(diǎn)
標(biāo)準(zhǔn)型
漏極至源極電壓(Vdss)
500V
電流 - 連續(xù)漏極(Id) @ 25° C
8A
開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C
850 毫歐 @ 4.8A，10V
Id 時(shí)的 Vgs(th)（最大）
4V @ 250µA
閘電荷(Qg) @ Vgs
39nC @ 10V
輸入電容 (Ciss) @ Vds
1100pF @ 25V
功率 - 最大
3.1W
安裝類(lèi)型
通孔
封裝/外殼
TO-262-3，長(zhǎng)引線，I²Pak，TO-262AA
供應(yīng)商設(shè)備封裝
I2PAK
包裝
管件
其它名稱(chēng)
*IRF840LCL

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