IRF7901D1 Datasheet

IC型號：
IRF7901D1
PDF描述：
Dual FETKY⑩ Co-Packaged Dual MOSFET Plus Schottky Diode
文件大?。?/label>
257.89KB
PDF頁數(shù)：
8頁
芯片廠家：
IRF

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PD- 93844B

IRF7901D1

鈥?Co-Pack Dual N-channel HEXFET

廬

Power MOSFET

and Schottky Diode

鈥?Ideal for Synchronous Buck DC-DC

Converters Up to 5A Peak Output

鈥?Low Conduction Losses

鈥?Low Switching Losses

鈥?Low Vf Schottky Rectifier

S ource

Gate

PGND

Dual FETKY鈩?/div>

Co-Packaged Dual MOSFET Plus Schottky Diode

Device Ratings (Max.Values)

Pwr

Vin

Pwr

Vin

Pwr

Vout

Pwr

Vout

and Schottky

(on)

30V

38 m鈩?/div>

10.5 nC

3.8 nC

1.0V

30V

32 m鈩?/div>

18.3 nC

9.0 nC

0.52V

SO-8

Gate

T op View

Description

The FETKY

鈩?/div>

family of Co-Pack HEXFET

廬

MOSFETs and Schottky diodes offers the designer an innovative,

board space saving solution for switching regulator and power management applications. Advanced

HEXFET

廬

MOSFETs combined with low forward drop Schottky results in an extremely efficient device suitable

for a wide variety of portable electronics applications.

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple

die capability making it ideal in a variety of power applications. With these improvements, multiple devices can

be used in an application with dramatically reduced board space. Internal connections enable easier board

layout design with reduced stray inductance.

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Output

Current (V

鈮?/div>

4.5V)聞

Pulsed Drain Current聛

Power Dissipation聝

Pulsed Source Current

聛

Thermal Resistance

Parameter

Maximum Junction-to-Ambient聝

Maximum Junction-to-Lead聟

胃JA

胃JL

Max.

62.5

Units

擄C/W

= 100擄C

Junction & Storage Temperature Range

, T

STG

2.0

鈥?5 to 150

擄C

= 100擄C

Symbol

IRF7901D1

鹵20

6.2

Units

www.irf.com

9/19/01

標(biāo)準(zhǔn)包裝
95
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 陣列
系列
FETKY™
FET 型
2 個 N 溝道（雙）
FET 特點
邏輯電平門
漏極至源極電壓(Vdss)
30V
電流 - 連續(xù)漏極(Id) @ 25° C
6.2A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
38 毫歐 @ 5A，4.5V
Id 時的 Vgs(th)（最大）
1V @ 250µA
閘電荷(Qg) @ Vgs
10.5nC @ 5V
輸入電容 (Ciss) @ Vds
780pF @ 16V
功率 - 最大
2W
安裝類型
表面貼裝
封裝/外殼
8-SOIC（0.154"，3.90mm 寬）
供應(yīng)商設(shè)備封裝
8-SO
包裝
管件
其它名稱
*IRF7901D1

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