PD - 97069
IRF7853PbF
HEXFET
廬
Power MOSFET
Applications
l
Primary Side Switch in Bridge Topology
V
DSS
R
DS(on)
max
I
D
in Universal Input (36-75Vin) Isolated
100V 18m:@VGS = 10V 8.3A
DC-DC Converters
l
Primary Side Switch in Push-Pull
Topology for 18-36Vin Isolated DC-DC
A
Converters
A
1
8
D
S
l
Secondary Side Synchronous
2
7
Rectification Switch for 15Vout
S
D
l
Suitable for 48V Non-Isolated
3
6
S
D
Synchronous Buck DC-DC Applications
4
5
G
D
Benefits
l
Low Gate to Drain Charge to Reduce
SO-8
Top View
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
DM
P
D
@T
A
= 25擄C
dv/dt
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
100
鹵 20
8.3
6.6
66
2.5
0.02
5.1
-55 to + 150
Units
V
A
c
Maximum Power Dissipation
Linear Derating Factor
Peak Diode Recovery dv/dt
Operating Junction and
W
W/擄C
V/ns
擄C
h
Storage Temperature Range
Thermal Resistance
Parameter
R
胃JL
R
胃JA
Junction-to-Drain Lead
Junction-to-Ambient (PCB Mount)
Typ.
Max.
20
50
Units
擄C/W
ei
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Notes
聛
through
聡
are on page 8
www.irf.com
1
1/5/06
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