鈥?/div>
N-Channel Application-Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Switching Losses
S
S
1
8
7
A
D
D
D
D
2
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRF7822 has been optimized for all parameters that
are critical in synchronous buck converters including
R
DS(on)
, gate charge and Cdv/dt-induced turn-on immunity.
The IRF7822 offers particulary low R
DS(on)
and high Cdv/
dt immunity for synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 3W is possible in a typical
PCB mount application.
S
G
3
6
4
5
SO-8
T o p V ie w
DEVICE CHARACTERISTICSU
IRF7822
R
DS
(on)
Q
G
Q
sw
Q
oss
5.0m鈩?/div>
44nC
12nC
27nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (V
GS
鈮?/div>
4.5V)
Pulsed Drain CurrentQ
Power Dissipation
T
A
= 25擄C
T
A
= 70擄C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source CurrentQ
Thermal Resistance
Parameter
Maximum Junction-to-AmbientS
Maximum Junction-to-Lead
R
胃JA
R
胃JL
Max.
40
20
Units
擄C/W
擄C/W
T
J
, T
STG
I
S
I
SM
T
A
= 25擄C
T
A
= 70擄C
I
DM
P
D
Symbol
V
DS
V
GS
I
D
IRF7822
30
鹵12
18
13
150
3.1
3.0
鈥?5 to 150
3.8
150
擄C
A
W
A
Units
V
www.irf.com
1
07/11/01
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