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IRF7811A Datasheet

  • IRF7811A

  • Chipset for DC-DC Converters

  • 4頁

  • IRF

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PD - 93810
PD - 93811
IRF7809A/IRF7811A
IRF7809A/IRF7811A
PROVISIONAL DATASHEET
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
N-Channel Application-Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Switching Losses
Minimizes Parallel MOSFETs for high current
applications
HEXFET
廬
Chipset for DC-DC Converters
S
S
S
G
1
8
7
A
A
D
D
D
D
2
Description
These new devices employ advanced HEXFET
廬
Power
MOSFET technology to achieve an unprecedented balance
of on-resistance and gate charge. The reduced conduction
and switching losses make them ideal for high efficiency
DC-DC converters that power the latest generation of
microprocessors.
Both the IRF7809A and IRF7811A have been optimized
and are 100% tested for all parameters that are critical in
synchronous buck converters including R
DS(on)
, gate charge
and Cdv/dt-induced turn-on immunity. The IRF7809A offers
particulary low R
DS(on)
and high Cdv/dt immunity for
synchronous FET applications. The IRF7811A offers an
extremely low combination of Q
sw
& R
DS(on)
for reduced
losses in control FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical PCB
mount application.
3
6
4
5
SO-8
T o p V ie w
DEVICE RATINGS
IRF7809A
V
DS
R
DS
(on)
Q
G
Q
sw
Q
oss
30V
8.5 m鈩?/div>
73 nC
22.5 nC
30 nC
IRF7811A
28V
12 m鈩?/div>
23 nC
7 nC
31 nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (V
GS
鈮?/div>
4.5V)
Pulsed Drain Current聛
Power Dissipation
T
A
= 25擄C
T
L
= 90擄C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current聛
Thermal Resistance
Parameter
Maximum Junction-to-Ambient聝
Maximum Junction-to-Lead
R
胃JA
R
胃JL
Max.
50
25
Units
擄C/W
擄C/W
T
J
, T
STG
I
S
I
SM
2.5
50
T
A
= 25擄C
T
L
= 90擄C
I
DM
P
D
Symbol
V
DS
V
GS
I
D
14.5
14.2
100
2.5
2.4
鈥?5 to 150
2.5
50
擄C
A
IRF7809A
30
鹵12
11.4
11.2
100
W
A
IRF7811A
28
Units
V
www.irf.com
1
01/19/00

IRF7811A 產(chǎn)品屬性

  • 95

  • 分離式半導體產(chǎn)品

  • FET - 單

  • HEXFET®

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門

  • 28V

  • 11A

  • 10 毫歐 @ 11A，10V

  • 3V @ 250µA

  • 26nC @ 4.5V

  • 1760pF @ 15V

  • 2.5W

  • 表面貼裝

  • 8-SOIC（0.154"，3.90mm 寬）

  • 8-SO

  • 管件

  • *IRF7811A

IRF7811A相關型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET
    INTERSIL
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET
    INTERSIL [...
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
    INTERSIL
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD
  • 英文版
    TRANSISTORS N-CHANNEL
    IRF
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD ...
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG [S...
  • 英文版
    TRANSISTORS N-CHANNEL
    IRF [Inter...
  • 英文版
    3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
    INTERSIL [...
  • 英文版
    TRANSISTORS N-CHANNEL
    IRF
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD

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