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IRF7811AV Datasheet

  • IRF7811AV

  • N-Channel Application-Specific MOSFETs

  • 6頁(yè)

  • IRF

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PD-94009
IRF7811AV
IRF7811AV
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
N-Channel Application-Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Switching Losses
Minimizes Parallel MOSFETs for high current
applications
S
S
S
G
1
8
7
A
A
D
D
D
D
2
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRF7811AV has been optimized for all parameters
that are critical in synchronous buck converters including
R
DS(on)
, gate charge and Cdv/dt-induced turn-on immunity.
The IRF7811AV offers an extremely low combination of
Q
sw
& R
DS(on)
for reduced losses in both control and
synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical
PCB mount application.
3
6
4
5
SO-8
T o p V ie w
DEVICE CHARACTERISTICS聟
IRF7811AV
R
DS
(on)
Q
G
Q
sw
Q
oss
11m鈩?/div>
17nC
6.7nC
8.1nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (V
GS
鈮?/div>
4.5V)
Pulsed Drain Current聛
Power Dissipation聝
T
A
= 25擄C
T
L
= 90擄C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current聛
Thermal Resistance
Parameter
Maximum Junction-to-Ambient聝
Maximum Junction-to-Lead
R
胃JA
R
胃JL
Max.
50
20
Units
擄C/W
擄C/W
T
J
, T
STG
I
S
I
SM
T
A
= 25擄C
T
L
= 90擄C
I
DM
P
D
Symbol
V
DS
V
GS
I
D
IRF7811AV
30
鹵20
10.8
11.8
100
2.5
3.0
鈥?5 to 150
2.5
50
擄C
A
W
A
Units
V
www.irf.com
1
12/13/00

IRF7811AV 產(chǎn)品屬性

  • 95

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單路

  • HEXFET®

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門(mén)

  • 14 毫歐 @ 15A, 4.5V

  • 30V

  • 10.8A

  • 3V @ 250µA

  • 26nC @ 5V

  • 1801pF @ 10V

  • 2.5W

  • 表面貼裝

  • 8-SOIC (0.154", 3.90mm 寬)

  • 8-SO

  • 管件

  • *IRF7811AV

IRF7811AV相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET
    INTERSIL
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET
    INTERSIL [...
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
    INTERSIL
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD
  • 英文版
    TRANSISTORS N-CHANNEL
    IRF
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD ...
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG [S...
  • 英文版
    TRANSISTORS N-CHANNEL
    IRF [Inter...
  • 英文版
    3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
    INTERSIL [...
  • 英文版
    TRANSISTORS N-CHANNEL
    IRF
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD

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