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IRF7805QPBF Datasheet

  • IRF7805QPBF

  • HEXFET㈢ Power MOSFET

  • 5頁(yè)

  • IRF

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PD 鈥?96114
IRF7805QPbF
l
l
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
N Channel MOSFET
Surface Mount
Available in Tape & Reel
150擄C Operating Temperature
Automotive [Q101] Qualified
Lead-Free
SO-8
S
S
S
G
1
2
3
4
8
7
A
D
D
D
D
6
5
Description
Specifically designed for Automotive applications, these
HEXFET
廬
Power MOSFET's in package utilize the lastest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a
150擄C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These
benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and
a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal
characteristics making it ideal in a variety of power
applications. This surface mount SO-8 can dramatically
reduce board space and is also available
in Tape & Reel.
T o p V ie w
Device Features
IRF7805Q
V
DS
30V
R
DS(on)
11m鈩?/div>
Qg
31nC
Qsw
11.5nC
Qoss
36nC
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
DM
P
D
@T
A
= 25擄C
P
D
@T
A
= 70擄C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Max.
30
鹵 12
13
10
100
2.5
1.6
0.02
-55 to + 150
Units
V
e
Power Dissipation
e
Power Dissipation
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
c
A
W
W/擄C
擄C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
R
胃JL
R
胃JA
h
Junction-to-Ambient
eh
Junction-to-Drain Lead
Parameter
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max.
20
50
Units
擄C/W
www.irf.com
1
07/23/07

IRF7805QPBF 產(chǎn)品屬性

  • International Rectifier

  • N-Channel

  • 30 V

  • 12 V

  • 13 A

  • SMD/SMT

  • SOIC-8

  • Tube

  • 22 nC

  • 2.5 W

  • 95

IRF7805QPBF相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET
    INTERSIL
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET
    INTERSIL [...
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
    INTERSIL
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD
  • 英文版
    TRANSISTORS N-CHANNEL
    IRF
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD ...
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG [S...
  • 英文版
    TRANSISTORS N-CHANNEL
    IRF [Inter...
  • 英文版
    3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
    INTERSIL [...
  • 英文版
    TRANSISTORS N-CHANNEL
    IRF
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD

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