鈥?/div>
N Channel Application Specific MOSFETs
Ideal for Mobile DC-DC Converters
Low Conduction Losses
Low Switching Losses
Lead-Free
S
S
S
G
1
2
3
4
8
7
A
D
D
D
D
6
5
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The
reduced conduction and switching losses make this
device ideal for high efficiency DC-DC Converters that
power the latest generation of mobile
microprocessors.
The IRF7805PbF offers maximum efficiency for
mobile CPU core DC-DC converters.
SO-8
Device Features
V
DS
R
DS(on)
Qg
Qsw
Qoss
T o p V ie w
IRF7805PbF
30V
11m鈩?/div>
31nC
11.5nC
36nC
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
DM
P
D
@T
A
= 25擄C
P
D
@T
A
= 70擄C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
Pulsed Drain Current
Continuous Drain Current, V
GS
@ 10V
Max.
30
Units
V
e
Power Dissipation
e
Power Dissipation
c
e
@ 10V
e
鹵 12
13
10
100
2.5
1.6
0.02
-55 to + 150
W/擄C
擄C
W
A
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
R
胃JL
R
胃JA
g
Junction-to-Ambient
eg
Junction-to-Drain Lead
Parameter
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max.
20
50
Units
擄C/W
www.irf.com
1
01/09/08
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