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PD - 94174

IRF7757

HEXFET

廬

Power MOSFET

l

l

l

l

l

l

Ultra Low On-Resistance

Dual N-Channel MOSFET

Very Small SOIC Package

Low Profile (< 1.2mm)

Available in Tape & Reel

Common Drain Configuration

V

DSS

20V

R

DS(on)

max (m鈩?

鈩?

35@V

GS

= 4.5V

40@V

GS

= 2.5V

I

D

4.8A

3.8A

Description

HEXFET

廬

Power MOSFETs from International Rectifier

utilize advanced processing techniques to achieve ex-

tremely low on-resistance per silicon area. This benefit,

combined with the ruggedized device design, that Inter-

national Rectifier is well known for,

provides the de-

1

2

3

4

1=

2=

3=

4=

S1

G1

S2

G2

8=

7=

6=

5=

D

D

D

D

8

7

6

5

signer with an extremely efficient and reliable device

for battery and load management.

The TSSOP-8 package has 45% less footprint area than

the standard SO-8. This makes the TSSOP-8 an ideal

device for applications where printed circuit board space

is at a premium. The low profile (<1.2mm) allows it to fit

easily into extremely thin environments such as portable

electronics and PCMCIA cards.

TSSOP-8

Absolute Maximum Ratings

Parameter

V

DS

I

D

@ T

A

= 25擄C

I

D

@ T

A

= 70擄C

I

DM

P

D

@T

A

= 25擄C

P

D

@T

A

= 70擄C

V

GS

T

J,

T

STG

Drain- Source Voltage

Continuous Drain Current, V

GS

@ 4.5V

Continuous Drain Current, V

GS

@ 4.5V

Pulsed Drain Current

聛

Power Dissipation

聝

Power Dissipation

聝

Linear Derating Factor

Gate-to-Source Voltage

Junction and Storage Temperature Range

Max.

20

4.8

3.9

19

1.2

0.76

9.5

鹵 12

-55 to + 150

Units

V

A

W

mW/擄C

V

擄C

Thermal Resistance

Parameter

R

胃JA

Maximum Junction-to-Ambient

聝

Max.

105

Units

擄C/W

www.irf.com

1

05/03/01

next

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