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IRF7756 Datasheet

  • IRF7756

  • TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 12V V(BR)DS...

  • 9頁

  • ETC

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PD -94159
IRF7756
HEXFET
廬
Power MOSFET
l
l
l
l
l
Ultra Low On-Resistance
Dual P-Channel MOSFET
Very Small SOIC Package
Low Profile (< 1.2mm)
Available in Tape & Reel
V
DSS
-12V
R
DS(on)
max
0.040@V
GS
= -4.5V
0.058@V
GS
= -2.5V
0.087@V
GS
= -1.8V
I
D
鹵
4.3A
鹵
3.4A
鹵
2.2A
Description
HEXFET
廬
Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for,
provides thedesigner
1
2
3
4
1=
2=
3=
4=
D1
S1
S1
G1
8=
7=
6=
5=
8
7
6
5
D2
S2
S2
G2
with an extremely efficient and reliable device for
battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.1mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
TSSOP-8
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
DM
P
D
@T
A
= 25擄C
P
D
@T
A
= 70擄C
V
GS
T
J
, T
STG
Drain-Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
聛
Maximum Power Dissipation
聝
Maximum Power Dissipation
聝
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-12
-4.3
-3.5
-17
1.0
0.64
8.0
鹵8.0
-55 to +150
Units
V
A
W
W
mW/擄C
V
擄C
Thermal Resistance
Parameter
R
胃JA
Maximum Junction-to-Ambient
聝
Max.
125
Units
擄C/W
www.irf.com
1
5/10/01

IRF7756 產(chǎn)品屬性

  • 95

  • 分離式半導體產(chǎn)品

  • FET - 陣列

  • HEXFET®

  • 2 個 P 溝道（雙）

  • 邏輯電平門

  • 12V

  • 4.3A

  • 40 毫歐 @ 4.3A，4.5V

  • 900mV @ 250µA

  • 18nC @ 4.5V

  • 1400pF @ 10V

  • 1W

  • 表面貼裝

  • 8-TSSOP（0.173"，4.40mm 寬）

  • 8-TSSOP

  • 管件

  • *IRF7756

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