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IRF7752 Datasheet

  • IRF7752

  • Power MOSFET(Vdss=30V)

  • 7頁

  • IRF

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PD -94030A
IRF7752
HEXFET
廬
Power MOSFET
l
l
l
l
l
Ultra Low On-Resistance
Dual N-Channel MOSFET
Very Small SOIC Package
Low Profile (< 1.1mm)
Available in Tape & Reel
V
DSS
30V
R
DS(on)
max
0.030@V
GS
= 10V
0.036@V
GS
= 4.5V
I
D
4.6A
3.9A
Description
HEXFET
廬
power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design , that Inter-
national Rectifier is well known for,
provides thedesigner
1
2
3
4
1=
2=
3=
4=
D1
S1
S1
G1
8=
7=
6=
5=
8
7
6
5
D2
S2
S2
G2
with an extremely efficient and reliable device for use
in battery and load management.
The TSSOP-8 package, has 45% less footprint area of the
standard SO-8. This makes the TSSOP-8 an ideal device
for applications where printed circuit board space is at a
premium.
The low profile (<1.1mm) of the TSSOP-8 will allow it to fit
easily into extremely thin application environments such
as portable electronics and PCMCIA cards.
TSSOP-8
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 70擄C
I
DM
P
D
@T
A
= 25擄C
P
D
@T
A
= 70擄C
V
GS
T
J,
T
STG
Drain- Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
聛
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
30
鹵4.6
鹵3.7
鹵37
1.0
0.64
8.0
鹵 12
-55 to + 150
Units
V
A
W
mW/擄C
V
擄C
Thermal Resistance
Parameter
R
胃JA
Maximum Junction-to-Ambient
聝
Max.
125
Units
擄C/W
www.irf.com
1
3/25/01

IRF7752 產(chǎn)品屬性

  • 100

  • 分離式半導體產(chǎn)品

  • FET - 陣列

  • HEXFET®

  • 2 個 N 溝道（雙）

  • 邏輯電平門

  • 30V

  • 4.6A

  • 30 毫歐 @ 4.6A，10V

  • 2V @ 250µA

  • 9nC @ 4.5V

  • 861pF @ 25V

  • 1W

  • 表面貼裝

  • 8-TSSOP（0.173"，4.40mm 寬）

  • 8-TSSOP

  • 管件

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