IRF7726 Datasheet

IC型號：
IRF7726
PDF描述：
Power MOSFET(Vdss=-30V)
文件大?。?/label>
97.00KB
PDF頁數(shù)：
9頁
芯片廠家：
IRF

閱覽下載糾錯 0

掃碼查看芯片數(shù)據(jù)手冊

上傳產(chǎn)品規(guī)格書

PDF預(yù)覽

PD -94064

IRF7726

HEXFET

廬

Power MOSFET

Ultra Low On-Resistance

P-Channel MOSFET

Very Small SOIC Package

Low Profile (< 1.2mm)

Available in Tape & Reel

DSS

-30V

DS(on)

max

0.026@V

= -10V

0.040@V

= -4.5V

7.0A

6.0A

Description

HEXFET

廬

Power MOSFETs from International Recti-

fier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the ruggedized device design,

that International Rectifier is well known for, provides

the designer with an extremely efficient and reliable

device for battery and load management.

The new Micro8 package, with half the footprint area

of the standard SO-8, provides the smallest footprint

available in an SOIC outline. This makes the Micro8

an ideal device for applications where printed circuit

board space is at a premium. The low profile (<1.2mm)

of the Micro8 will allow it to fit easily into extremely thin

application environments such as portable electronics

and PCMCIA cards.

T op V ie w

MICRO-8

Absolute Maximum Ratings

Parameter

@ T

= 25擄C

@ T

= 70擄C

= 25擄C

= 70擄C

, T

STG

Drain-Source Voltage

Continuous Drain Current, V

@ -10V

Continuous Drain Current, V

@ -10V

Pulsed Drain Current

聛

Maximum Power Dissipation

聝

Maximum Power Dissipation

聝

Linear Derating Factor

Gate-to-Source Voltage

Junction and Storage Temperature Range

Max.

-30

-7.0

-5.7

-28

1.79

1.14

0.01

鹵20

-55 to +150

Units

W/擄C

擄C

Thermal Resistance

Parameter

胃JA

Maximum Junction-to-Ambient

聝

Max.

Units

擄C/W

www.irf.com

12/21/00

標(biāo)準(zhǔn)包裝
80
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 單
系列
HEXFET®
FET 型
MOSFET P 通道，金屬氧化物
FET 特點(diǎn)
邏輯電平門
漏極至源極電壓(Vdss)
30V
電流 - 連續(xù)漏極(Id) @ 25° C
7A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
26 毫歐 @ 7A，10V
Id 時的 Vgs(th)（最大）
2.5V @ 250µA
閘電荷(Qg) @ Vgs
69nC @ 10V
輸入電容 (Ciss) @ Vds
2204pF @ 25V
功率 - 最大
1.79W
安裝類型
表面貼裝
封裝/外殼
8-TSSOP，8-MSOP（0.118"，3.00mm 寬）
供應(yīng)商設(shè)備封裝
Micro8?
包裝
管件
其它名稱
*IRF7726

IRF7726相關(guān)型號PDF文件下載

型號

版本

描述

廠商

下載
IRF710

英文版

N-Channel Power MOSFETs, 2.25A, 350-400V

FAIRCHILD

IRF710
IRF710

英文版

2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET

IRF710
IRF710

英文版

N-Channel Power MOSFETs, 2.25A, 350-400V

FAIRCHILD ...

IRF710
IRF710

英文版

2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET

INTERSIL [...

IRF710
IRF711

英文版

N-Channel Power MOSFETs, 2.25A, 350-400V

FAIRCHILD

IRF711
IRF711

英文版

N-Channel Power MOSFETs, 2.25A, 350-400V

FAIRCHILD ...

IRF711
IRF712

英文版

N-Channel Power MOSFETs, 2.25A, 350-400V

FAIRCHILD

IRF712
IRF712

英文版

N-Channel Power MOSFETs, 2.25A, 350-400V

FAIRCHILD ...

IRF712
IRF713

英文版

N-Channel Power MOSFETs, 2.25A, 350-400V

FAIRCHILD

IRF713
IRF713

英文版

N-Channel Power MOSFETs, 2.25A, 350-400V

FAIRCHILD ...

IRF713
IRF720

英文版

3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET

IRF720
IRF720

英文版

N-Channel Power MOSFETs, 3.0 A, 350-400 V

FAIRCHILD

IRF720
IRF720

英文版

TRANSISTORS N-CHANNEL

IRF

IRF720
IRF720

英文版

N-CHANNEL POWER MOSFETS

IRF720
IRF720

英文版

N-Channel Power MOSFETs, 3.0 A, 350-400 V

FAIRCHILD ...

IRF720
IRF720

英文版

N-CHANNEL POWER MOSFETS

SAMSUNG [S...

IRF720
IRF720

英文版

TRANSISTORS N-CHANNEL

IRF [Inter...

IRF720
IRF720

英文版

3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET

INTERSIL [...

IRF720
IRF721

英文版

TRANSISTORS N-CHANNEL

IRF

IRF721
IRF721

英文版

N-Channel Power MOSFETs, 3.0 A, 350-400 V

FAIRCHILD

IRF721

IRF7726 Datasheet

PDF預(yù)覽

IRF7726 產(chǎn)品屬性

IRF7726相關(guān)型號PDF文件下載

您可能感興趣的PDF文件資料

熱門IC型號推薦

IRF7726 Datasheet

PDF預(yù)覽

IRF7726 產(chǎn)品屬性

IRF7726相關(guān)型號PDF文件下載

您可能感興趣的PDF文件資料

熱門IC型號推薦

建議反饋

PDF糾錯X