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IRF7704PBF Datasheet

  • IRF7704PBF

  • HEXFET Power MOSFET

  • 9頁(yè)

  • IRF

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PD- 96025
IRF7704PbF
HEXFET
廬
Power MOSFET
l
l
l
l
l
l
Ultra Low On-Resistance
P-Channel MOSFET
Very Small SOIC Package
Low Profile (< 1.1mm)
Available in Tape & Reel
Lead-Free
V
DSS
-40V
R
DS(on)
max (mW)
46@V
GS
= -10V
74@V
GS
= -4.5V
I
D
-4.6A
-3.7A
Description
HEXFET
廬
Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for,
provides thedesigner
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with an extremely efficient and reliable device for
battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
B
T
TSSOP-8
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
DM
P
D
@T
A
= 25擄C
P
D
@T
A
= 70擄C
V
GS
T
J,
T
STG
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
聛
Power Dissipation
聝
Power Dissipation
聝
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-40
-4.6
-3.7
-19
1.5
1.0
12
鹵 20
-55 to + 150
Units
V
A
W
mW/擄C
V
擄C
Thermal Resistance
Parameter
R
胃JA
Maximum Junction-to-Ambient
聝
Max.
83
Units
擄C/W
www.irf.com
1
02/06/06

IRF7704PBF 產(chǎn)品屬性

  • 190 ns

  • 25 ns

  • 25 nC V @ 4.5

  • 3150 pF V @ 25

  • 表面貼裝

  • 4.4mm

  • TSSOP

  • 3 x 4.4 x 1mm

  • 8

  • -55 °C

  • 1.5 W

  • ±20 V

  • 40 V

  • 0.046

  • 4.6 A

  • +150 °C

  • 2

  • 功率 MOSFET

  • 增強(qiáng)

  • P

  • 雙、雙源

  • 3mm

  • 1mm

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