IRF7703 Datasheet

IC型號(hào)：
IRF7703
PDF描述：
Power MOSFET(Vdss=-40V)
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PDF頁(yè)數(shù)：
9頁(yè)
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IRF

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PD - 94221

IRF7703

HEXFET

廬

Power MOSFET

Ultra Low On-Resistance

P-Channel MOSFET

Very Small SOIC Package

Low Profile (< 1.2mm)

Available in Tape & Reel

DSS

-40V

DS(on)

max (m鈩?

鈩?

28@V

= -10V

45@V

= -4.5V

-6.0A

-4.8A

Description

HEXFET

廬

Power MOSFETs from International Rectifier

utilize advanced processing techniques to achieve ex-

tremely low on-resistance per silicon area. This benefit,

combined with the ruggedized device design, that Inter-

national Rectifier is well known for,

provides the de-

signer with an extremely efficient and reliable device

for battery and load management.

The TSSOP-8 package has 45% less footprint area than

the standard SO-8. This makes the TSSOP-8 an ideal

device for applications where printed circuit board space

is at a premium. The low profile (<1.2mm) allows it to fit

easily into extremely thin environments such as portable

electronics and PCMCIA cards.

TSSOP-8

Absolute Maximum Ratings

Parameter

@ T

= 25擄C

@ T

= 70擄C

= 25擄C

= 70擄C

STG

Drain- Source Voltage

Continuous Drain Current, V

@ -10V

Continuous Drain Current, V

@ -10V

Pulsed Drain Current

聛

Power Dissipation

聝

Power Dissipation

聝

Linear Derating Factor

Gate-to-Source Voltage

Junction and Storage Temperature Range

Max.

-40

-6.0

-4.7

-24

1.5

0.96

0.012

鹵 20

-55 to + 150

Units

W/擄C

擄C

Thermal Resistance

Parameter

胃JA

Maximum Junction-to-Ambient

聝

Max.

Units

擄C/W

www.irf.com

05/11/01

標(biāo)準(zhǔn)包裝
100
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 單
系列
HEXFET®
FET 型
MOSFET P 通道，金屬氧化物
FET 特點(diǎn)
邏輯電平門
漏極至源極電壓(Vdss)
40V
電流 - 連續(xù)漏極(Id) @ 25° C
6A
開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C
28 毫歐 @ 6A，10V
Id 時(shí)的 Vgs(th)（最大）
3V @ 250µA
閘電荷(Qg) @ Vgs
62nC @ 4.5V
輸入電容 (Ciss) @ Vds
5220pF @ 25V
功率 - 最大
1.5W
安裝類型
表面貼裝
封裝/外殼
8-TSSOP（0.173"，4.40mm 寬）
供應(yīng)商設(shè)備封裝
8-TSSOP
包裝
管件

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