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PD-96027

IRF7702PbF

HEXFET

廬

Power MOSFET

l

l

l

l

l

l

l

Ultra Low On-Resistance

-1.8V Rated

P-Channel MOSFET

Very Small SOIC Package

Low Profile ( < 1.1mm)

Available in Tape & Reel

Lead-Free

V

DSS

-12V

R

DS(on)

max

0.014@V

GS

= -4.5V

0.019@V

GS

= -2.5V

0.027@V

GS

= -1.8V

I

D

-8.0A

-7.0A

-5.8A

9

'

&

%

$

'脙2脙9

&脙2脙T

%脙2脙T

$脙2脙9

Description

HEXFET

廬

Power MOSFETs from International Rectifier

utilize advanced processing techniques to achieve ex-

tremely low on-resistance per silicon area. This benefit,

combined with the ruggedized device design, that Inter-

national Rectifier is well known for,

provides thedesigner

!

"

#

脙2脙9

!脙2脙T

"脙2脙T

#脙2脙B

B

T

with an extremely efficient and reliable device for

battery and load management.

The TSSOP-8 package has 45% less footprint area than

the standard SO-8. This makes the TSSOP-8 an ideal

device for applications where printed circuit board space

is at a premium. The low profile (<1.1mm) allows it to fit

easily into extremely thin environments such as portable

electronics and PCMCIA cards.

TSSOP-8

Absolute Maximum Ratings

Parameter

V

DS

I

D

@ T

C

= 25擄C

I

D

@ T

C

= 70擄C

I

DM

P

D

@T

C

= 25擄C

P

D

@T

C

= 70擄C

V

GS

T

J,

T

STG

Drain- Source Voltage

Continuous Drain Current, V

GS

@ -4.5V

Continuous Drain Current, V

GS

@ -4.5V

Pulsed Drain Current

聛

Power Dissipation

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Junction and Storage Temperature Range

Max.

-12

鹵8.0

鹵7.0

鹵70

1.5

0.96

0.01

鹵 8.0

-55 to + 150

Units

V

A

W

W/擄C

V

擄C

Thermal Resistance

Parameter

R

胃JA

Maximum Junction-to-Ambient

聝

Max.

83

Units

擄C/W

www.irf.com

1

02/06/06

next

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