= 0.055鈩?/div>
Schottky Vf=0.39V
3
6
4
5
T op V ie w
The FETKY family of co-packaged MOSFETs and Schottky diodes offers the designer
an innovative, board space saving solution for switching regulator and power
management applications. International Rectifier utilizes advanced processing
techniques to achieve extremely low on-resistance per silicon area. Combining this
technology with International Rectifier鈥檚 low forward drop Schottky rectifiers results in
an extremely efficient device suitable for use in a wide variety of portable electronics
applications, such as cell phones, PDAs, etc.
The Micro8
TM
package makes an ideal device for applications where printed circuit
board space is at a premium. The low profile (<1.1mm) of the Micro8
TM
will allow it to
fit easily into extremely thin application environments such as portable electronics
Micro8鈩?/div>
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
DM
P
D
@T
A
= 25擄C
P
D
@T
A
= 70擄C
V
GS
dv/dt
T
J
, T
STG
Drain-Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
聛
Maximum Power Dissipation
聞
Maximum Power Dissipation
聞
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
聜
Junction and Storage Temperature Range
Max.
-20
-4.3
-3.4
-34
1.25
0.8
10
鹵 12
1.1
-55 to + 150
Units
V
A
W
W
mW/擄C
V
V/ns
擄C
Thermal Resistance
R
胃JA
Max.
Maximum Junction-to-Ambient
聞
Parameter
Units
100
擄C/W
Notes:
聛
Repetitive rating 鈥?pulse width limited by max. junction temperature (see Fig. 9)
聜
I
SD
鈮?/div>
-1.2A, di/dt
鈮?/div>
100A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, T
J
鈮?/div>
150擄C
聝
Pulse width
鈮?/div>
300碌s 鈥?duty cycle
鈮?/div>
2%
聞
When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance
www.irf.com
1
3/22/00
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