= 0.20鈩?/div>
Schottky Vf = 0.39V
3
6
4
5
Description
T op V ie w
The
FETKY
TM
family of co-packaged HEXFETs and Schottky diodes offer the
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.
The new Micro8 package, with half the footprint area of the standard SO-8, provides
TM
the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal
device for applications where printed circuit board space is at a premium. The low
TM
profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards.
TM
Micro8
TM
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
DM
P
D
@T
A
= 25擄C
P
D
@T
A
= 70擄C
V
GS
dv/dt
T
J,
T
STG
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
聦
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
聧
Junction and Storage Temperature Range
Maximum
-2.0
-1.6
-16
1.25
0.8
10
鹵 20
-5.0
-55 to +150
Units
A
W
mW/擄C
V
V/ns
擄C
Thermal Resistance Ratings
Parameter
R
胃JA
Junction-to-Ambient
聫
Maximum
100
Units
擄C/W
Notes:
聛
Repetitive rating 鈥?pulse width limited by max. junction temperature (see Fig. 9)
聜
I
SD
鈮?/div>
-1.2A, di/dt
鈮?/div>
160A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, T
J
鈮?/div>
150擄C
聝
Pulse width
鈮?/div>
300碌s 鈥?duty cycle
鈮?/div>
2%
聞
When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance
www.irf.com
1
5/7/99
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2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET
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N-Channel Power MOSFETs, 2.25A, 350-400V
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N-Channel Power MOSFETs, 2.25A, 350-400V
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N-Channel Power MOSFETs, 2.25A, 350-400V
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N-Channel Power MOSFETs, 2.25A, 350-400V
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3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
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