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IRF7507PBF Datasheet

  • IRF7507PBF

  • HEXFET㈢Power MOSFET

  • 8頁(yè)

  • IRF

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PD - 95218
IRF7507PbF
HEXFET
廬
Power MOSFET
Generation V Technology
l
Ultra Low On-Resistance
l
Dual N and P Channel MOSFET
l
Very Small SOIC Package
l
Low Profile (<1.1mm)
l
Available in Tape & Reel
l
Fast Switching
l
Lead-Free
Description
l
S1
G1
S2
G2
N-CHANNEL MOSFET
1
8
2
3
4
7
6
5
D1
D1
D2
D2
N-Ch
P-Ch
V
DSS
20V
-20V
P-CHANNEL MOSFET
Top View
R
DS(on)
0.135鈩?0.27鈩?/div>
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The new Micro8 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the
Micro8 an ideal device for applications where printed circuit board space is at
a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into
extremely thin application environments such as portable electronics and
PCMCIA cards.
Micro8
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
DM
P
D
@T
A
= 25擄C
P
D
@T
A
= 70擄C
V
GS
V
GSM
dv/dt
T
J
, T
STG
Drain-Source Voltage
Continuous Drain Current, V
GS
Continuous Drain Current, V
GS
Pulsed Drain Current
聛
Maximum Power Dissipation
聞
Maximum Power Dissipation
聞
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10碌S
Peak Diode Recovery dv/dt
聜
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
N-Channel
20
2.4
1.9
19
1.25
0.8
10
鹵 12
16
5.0
-5.0
-55 to + 150
240 (1.6mm from case)
Max.
P-Channel
-20
-1.7
-1.4
-14
Units
V
A
W
W
mW/擄C
V
V
V/ns
擄C
Thermal Resistance
Parameter
R
胃JA
Maximum Junction-to-Ambient
聞
Max.
100
Units
擄C/W
www.irf.com
1
5/11/04

IRF7507PBF 產(chǎn)品屬性

  • International Rectifier

  • N and P-Channel

  • 20 V

  • 12 V

  • 2.4 A

  • 140 mOhms

  • 5.3 nC

  • 1.25 W

IRF7507PBF相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET
    INTERSIL
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET
    INTERSIL [...
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
    INTERSIL
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD
  • 英文版
    TRANSISTORS N-CHANNEL
    IRF
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD ...
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG [S...
  • 英文版
    TRANSISTORS N-CHANNEL
    IRF [Inter...
  • 英文版
    3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
    INTERSIL [...
  • 英文版
    TRANSISTORS N-CHANNEL
    IRF
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD

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