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IRF7501 Datasheet

  • IRF7501

  • Power MOSFET(Vdss=20V, Rds(on)=0.135ohm)

  • 7頁(yè)

  • IRF

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PD - 91265H
PRELIMINARY
l
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IRF7501
HEXFET
廬
Power MOSFET
8
7
Generation V Technology
Ulrtra Low On-Resistance
Dual N-Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
S1
G1
S2
G2
1
D1
D1
D2
D2
2
V
DSS
=20V
3
6
4
5
R
DS(on)
= 0.135鈩?/div>
T o p V ie w
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The new Micro8 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the
Micro8 an ideal device for applications where printed circuit board space is
at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable electronics and
PCMCIA cards.
M icro 8
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
DM
P
D
@T
A
= 25擄C
P
D
@T
A
= 70擄C
V
GSM
V
GS
dv/dt
TJ , TSTG
Drain-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
聛
Maximum Power Dissipation聞
Maximum Power Dissipation
聞
Linear Derating Factor
Gate-to-Source Voltage Single Pulse tp<10碌s
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
聜
Operating Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
20
2.4
1.9
19
1.25
0.8
0.01
16
鹵 12
5.0
-55 to + 150
240 (1.6mm from case)
Units
V
A
W
W
W/擄C
V
V
V/ns
擄C
Thermal Resistance
Parameter
R
胃JA
Maximum Junction-to-Ambient
聞
Max.
100
Units
擄C/W
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
www.irf.com
1
4/30/98

IRF7501 產(chǎn)品屬性

  • 15 ns

  • 5.7 ns

  • 5.3 nC V @ 4.5

  • 260 pF V @ 15

  • 表面貼裝

  • 3mm

  • 微型

  • 3 x 3 x 0.86mm

  • 8

  • -55 °C

  • 1250 mW

  • ±12 V

  • 20 V

  • 0.135

  • 2.4 A

  • +150 °C

  • 2

  • 功率 MOSFET

  • 增強(qiáng)

  • N

  • 雙、雙漏極

  • 3mm

  • 0.86mm

IRF7501相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
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    FAIRCHILD
  • 英文版
    2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET
    INTERSIL
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    FAIRCHILD ...
  • 英文版
    2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET
    INTERSIL [...
  • 英文版
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  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
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    FAIRCHILD ...
  • 英文版
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    FAIRCHILD
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    FAIRCHILD ...
  • 英文版
    3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
    INTERSIL
  • 英文版
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    FAIRCHILD
  • 英文版
    TRANSISTORS N-CHANNEL
    IRF
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD ...
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    SAMSUNG [S...
  • 英文版
    TRANSISTORS N-CHANNEL
    IRF [Inter...
  • 英文版
    3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
    INTERSIL [...
  • 英文版
    TRANSISTORS N-CHANNEL
    IRF
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD

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