PD - 94654B
IRF7493
HEXFET
廬
Power MOSFET
Applications
l
High frequency DC-DC converters
Benefits
l
Low Gate-to-Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
V
DSS
80V
R
DS(on)
max
15m:@V
GS
=10V
Qg (typ.)
35nC
S
S
S
G
1
8
A
A
D
D
D
D
2
7
3
6
4
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 70擄C
I
DM
P
D
@T
C
= 25擄C
P
D
@T
C
= 70擄C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
80
鹵 20
9.3
7.4
74
2.5
1.6
0.02
-55 to + 150
Units
V
f
Maximum Power Dissipation
f
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
c
A
W
W/擄C
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JA
Junction-to-Lead
Junction-to-Ambient
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max.
20
50
Units
f
Notes
聛
through
聟
are on page 9
www.irf.com
1
7/29/03
next