PD - 94537
IRF7491
HEXFET
廬
Power MOSFET
Applications
High frequency DC-DC converters
V
DSS
80V
R
DS(on)
max
16m鈩V
GS
= 10V
I
D
9.7A
Benefits
Low Gate to Drain Charge to Reduce
Switching Losses
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
Fully Characterized Avalanche Voltage
and Current
S
S
S
G
1
8
A
A
D
D
D
D
2
7
3
6
4
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 100擄C
I
DM
P
D
@T
A
= 25擄C
dv/dt
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Max.
80
鹵 20
9.7
6.1
77
2.5
0.02
4.4
-55 to + 150
Units
V
A
W
W/擄C
V/ns
擄C
Thermal Resistance
Parameter
R
胃JL
R
胃JA
Junction-to-Drain Lead
Junction-to-Ambient (PCB Mount) *
Typ.
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鈥撯€撯€?/div>
Max.
20
50
Units
擄C/W
Notes
through
are on page 8
www.irf.com
1
08/30/02
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