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IRF7484 Datasheet

  • IRF7484

  • HEXFET Power MOSFET

  • 10頁

  • IRF

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PD - 94446B
Typical Applications
l
l
l
IRF7484
HEXFET
廬
Power MOSFET
Relay replacement
Anti-lock Braking System
Air Bag
Advanced Process Technology
Ultra Low On-Resistance
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
V
DSS
R
DS(on)
max (mW)
40V
10@V
GS
= 7.0V
I
D
14A
Benefits
l
l
l
l
S
S
1
8
A
A
D
D
D
D
2
7
Description
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET
廬
Power MOSFETs
utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional
features of this HEXFET power MOSFET are a 150擄C
junction operating temperature, fast switching speed
and improved repetitive avalanche rating. These benefits
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
S
G
3
6
4
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
DM
P
D
@T
A
= 25擄C
V
GS
E
AS
I
AR
E
AR
T
J,
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
聛
Power Dissipation
聝
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy聞
Avalanche Current聛
Repetitive Avalanche Energy聠
Junction and Storage Temperature Range
Max.
14
11
110
2.5
0.02
鹵 8.0
230
See Fig.16c, 16d, 19, 20
-55 to + 150
Units
A
W
W/擄C
V
mJ
A
mJ
擄C
Thermal Resistance
Symbol
R
胃JL
R
胃JA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
聝
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max.
20
50
Units
擄C/W
www.irf.com
1
04/16/04

IRF7484相關(guān)型號(hào)PDF文件下載

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