PD- 96128
SMPS MOSFET
IRF7478QPbF
HEXFET
廬
Power MOSFET
l
l
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
N Channel MOSFET
Surface Mount
Available in Tape & Reel
150擄C Operating Temperature
Automotive [Q101] Qualified
Lead-Free
V
DSS
60V
R
DS(on)
max (mW)
26@V
GS
= 10V
30@V
GS
= 4.5V
A
A
D
D
D
D
I
D
4.2A
3.5A
S
S
S
G
1
2
3
4
8
7
Description
Specifically designed for Automotive applications. Additional
features of these Automotive qualified HEXFET Power
MOSFET's are a 150擄C junction operating temperature,
fast switching speed and improved repetitive avalanche
rating. These benefits combine to make this design an
extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal
characteristics making it ideal in a variety of power
applications. This surface mount SO-8 can dramatically
reduce board space and is also available
in Tape & Reel.
6
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
DM
P
D
@T
A
= 25擄C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
聛
Power Dissipation聞
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
聠
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
7.0
5.6
56
2.5
0.02
鹵 20
3.7
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/擄C
V
V/ns
擄C
Thermal Resistance
Symbol
R
胃JL
R
胃JA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
聞
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max.
20
50
Units
擄C/W
Notes
聛
through
聠
are on page 8
www.irf.com
1
09/04/07
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