0.060鈩?/div>
I
D
4.5A
Benefits
Low Gate to Drain Charge to Reduce
Switching Losses
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
Fully Characterized Avalanche Voltage
and Current
S
S
S
G
1
8
7
A
A
D
D
D
D
2
3
6
4
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
DM
P
D
@T
A
= 25擄C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
4.5
3.6
36
2.5
0.02
鹵 30
3.5
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/擄C
V
V/ns
擄C
Typical SMPS Topologies
Telecom 48V input DC-DC with Half Bridge Primary or Datacom 28V input
with Passive Reset Forward Converter Primary
Notes
through
are on page 8
www.irf.com
1
11/23/01