PD- 91412L
IRF7422D2
FETKY
TM
MOSFET & Schottky Diode
Co-packaged HEXFET餂?Power
MOSFET and Schottky Diode
Ideal For Buck Regulator Applications
P-Channel HEXFET
Low V
F
Schottky Rectifier
Generation 5 Technology
SO-8 Footprint
Description
The
FETKY
TM
family of Co-packaged HEXFETs and
Schottky diodes offer the designer an innovative
board space saving solution for switching regulator
and power management applications. Generation 5
HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
Combinining this technology with International
Rectifier's low forward drop Schottky rectifiers results
in an extremely efficient device suitable for use in a
wide variety of portable electronics applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The
SO-8 package is designed for vapor phase, infrared or
wave soldering techniques.
A
A
S
G
1
8
7
A
A
D
D
D
D
V
DSS
= -20V
R
DS(on)
= 0.09鈩?/div>
Schottky Vf = 0.52V
2
3
6
4
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
DM
P
D
@T
A
= 25擄C
P
D
@T
A
= 70擄C
V
GS
dv/dt
T
J,
T
STG
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
鉃€
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
鉃?/div>
Junction and Storage Temperature Range
Maximum
-4.3
-3.4
-33
2.0
1.3
16
鹵 12
-5.0
-55 to +150
Units
A
W
mW/擄C
V
V/ns
擄C
Thermal Resistance Ratings
Parameter
R
胃JA
Junction-to-Ambient
鉃?/div>
Maximum
62.5
Units
擄C/W
Notes:
Repetitive rating 鈥?pulse width limited by max. junction temperature (see fig. 11)
I
SD
鈮?/div>
-2.2A, di/dt
鈮?/div>
-50A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, T
J
鈮?/div>
150擄C
Pulse width
鈮?/div>
300碌s 鈥?duty cycle
鈮?/div>
2%
Surface mounted on FR-4 board, t
鈮?/div>
10sec.
www.irf.com
1
11/27/01
IRF7422D2 產(chǎn)品屬性
95
分離式半導(dǎo)體產(chǎn)品
FET - 單路
FETKY™
MOSFET P 通道，金屬氧化物
二極管（隔離式）
90 毫歐 @ 2.2A, 4.5V
20V
4.3A
700mV @ 250µA
22nC @ 4.5V
610pF @ 15V
2W
表面貼裝
8-SOIC（0.154", 3.90mm 寬）
8-SO
管件
*IRF7422D2
IRF7422D2相關(guān)型號(hào)PDF文件下載
-
型號(hào)
版本
描述
廠商
下載
-
英文版
N-Channel Power MOSFETs, 2.25A, 350-400V
FAIRCHILD
-
英文版
2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET
-
英文版
N-Channel Power MOSFETs, 2.25A, 350-400V
FAIRCHILD ...
-
英文版
2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET
INTERSIL [...
-
英文版
N-Channel Power MOSFETs, 2.25A, 350-400V
FAIRCHILD
-
英文版
N-Channel Power MOSFETs, 2.25A, 350-400V
FAIRCHILD ...
-
英文版
N-Channel Power MOSFETs, 2.25A, 350-400V
FAIRCHILD
-
英文版
N-Channel Power MOSFETs, 2.25A, 350-400V
FAIRCHILD ...
-
英文版
N-Channel Power MOSFETs, 2.25A, 350-400V
FAIRCHILD
-
英文版
N-Channel Power MOSFETs, 2.25A, 350-400V
FAIRCHILD ...
-
英文版
3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
-
英文版
N-Channel Power MOSFETs, 3.0 A, 350-400 V
FAIRCHILD
-
英文版
TRANSISTORS N-CHANNEL
IRF
-
英文版
N-CHANNEL POWER MOSFETS
-
英文版
N-Channel Power MOSFETs, 3.0 A, 350-400 V
FAIRCHILD ...
-
英文版
N-CHANNEL POWER MOSFETS
SAMSUNG [S...
-
英文版
TRANSISTORS N-CHANNEL
IRF [Inter...
-
英文版
3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
INTERSIL [...
-
英文版
TRANSISTORS N-CHANNEL
IRF
-
英文版
N-Channel Power MOSFETs, 3.0 A, 350-400 V
FAIRCHILD
1
2
3
4
5
6
7
8
