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PD - 94278

IRF7420

HEXFET

廬

Power MOSFET

l

l

l

l

Ultra Low On-Resistance

P-Channel MOSFET

Surface Mount

Available in Tape & Reel

V

DSS

-12V

R

DS(on)

max

14m鈩V

GS

= -4.5V

17.5m鈩V

GS

= -2.5V

26m鈩V

GS

= -1.8V

I

D

-

11.5A

-

9.8A

-

8.1A

Description

These P-Channel HEXFET

廬

Power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve the extremely low on-resistance

per silicon area. This benefit provides the designer

with an extremely efficient device for use in battery

and load management applications..

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements, multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infrared, or wave soldering techniques.

S

1

8

7

A

D

D

D

D

S

S

G

2

3

6

4

5

T o p V ie w

SO-8

Absolute Maximum Ratings

Parameter

V

DS

I

D

@ T

A

= 25擄C

I

D

@ T

A

= 70擄C

I

DM

P

D

@T

A

= 25擄C

P

D

@T

A

= 70擄C

V

GS

T

J,

T

STG

Drain- Source Voltage

Continuous Drain Current, V

GS

@ -4.5V

Continuous Drain Current, V

GS

@ -4.5V

Pulsed Drain Current

聛

Power Dissipation

聝

Power Dissipation

聝

Linear Derating Factor

Gate-to-Source Voltage

Junction and Storage Temperature Range

Max.

-20

-11.5

-9.2

-46

2.5

1.6

20

鹵8

-55 to +150

Units

V

A

W

mW/擄C

V

擄C

Thermal Resistance

Parameter

R

胃JA

Maximum Junction-to-Ambient

聝

Max.

50

Units

擄C/W

www.irf.com

1

07/11/01

next

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