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IRF7413QPBF Datasheet

  • IRF7413QPBF

  • HEXFET Power MOSFET

  • 9頁(yè)

  • IRF

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PD - 96112
IRF7413QPbF
l
l
l
l
l
l
l
l
HEXFET
廬
Power MOSFET
A
A
D
D
D
D
Advanced Process Technology
Ultra Low On-Resistance
N Channel MOSFET
Surface Mount
Available in Tape & Reel
150擄C Operating Temperature
Automotive [Q101] Qualified
Lead-Free
S
S
S
G
1
2
3
4
8
7
V
DSS
= 30V
R
DS(on)
= 0.011鈩?/div>
6
5
Top View
Description
Specifically designed for Automotive applications, these HEXFET
廬
Power MOSFET's in SO-8 package utilize the lastest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of these Automotive qualified HEXFET
Power MOSFET's are a 150擄C junction operating temperature,
fast switching speed and improved repetitive avalanche rating.
These benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide
variety of other applications.
The efficient SO-8 package provides enhanced thermal
characteristics making it ideal in a variety of power applications.
This surface mount SO-8 can dramatically reduce board space
and is also available
in Tape & Reel.
SO-8
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
DM
P
D
@T
A
= 25擄C
E
AS
dv/dt
T
J,
T
STG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energency
Peak Diode Recovery dv/dt
Max
30
鹵 20
13
9.2
58
2.5
0.02
260
5.0
-55 to +150
Units
V
A
W
mW/擄C
mJ
V/ns
擄C
c
e
d
Junction and Storage Temperature Range
Thermal Resistance Ratings
Symbol
R
胃JL
R
胃JA
Junction-to-Drain Lead
Junction-to-Ambient
h
gh
Parameter
Typ
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max
20
50
Units
擄C/W
www.irf.com
1
07/23/07

IRF7413QPBF 產(chǎn)品屬性

  • International Rectifier

  • N-Channel

  • 30 V

  • 20 V

  • 13 A

  • 18 mOhms

  • SMD/SMT

  • SOIC-8

  • 52 nC

  • 2.5 W

IRF7413QPBF相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET
    INTERSIL
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET
    INTERSIL [...
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
    INTERSIL
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD
  • 英文版
    TRANSISTORS N-CHANNEL
    IRF
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD ...
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG [S...
  • 英文版
    TRANSISTORS N-CHANNEL
    IRF [Inter...
  • 英文版
    3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
    INTERSIL [...
  • 英文版
    TRANSISTORS N-CHANNEL
    IRF
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD

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