= 0.040鈩?/div>
6
5
Top View
Description
Specifically designed for Automotive applications, these
HEXFET
廬
Power MOSFET's in package utilize the lastest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a
150擄C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These
benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and
a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal
characteristics making it ideal in a variety of power
applications. This surface mount SO-8 can dramatically
reduce board space and is also available
in Tape & Reel.
SO-8
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
DM
P
D
@T
A
= 25擄C
V
GS
dv/dt
T
J,
T
STG
10 Sec. Pulsed Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
聛
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
聜
Junction and Storage Temperature Range
Max.
-7.7
-6.7
-5.4
-27
2.5
0.02
鹵 12
-5.0
-55 to + 150
Units
A
W
W/擄C
V
V/ns
擄C
Thermal Resistance Ratings
Parameter
R
胃JA
Maximum Junction-to-Ambient聞
Typ.
聳聳聳
Max.
50
Units
擄C/W
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1
08/29/07