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IRF7389 Datasheet

  • IRF7389

  • HEXFET Power MOSFET

  • 10頁(yè)

  • IRF

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PD - 91645A
IRF7389
HEXFET
廬
Power MOSFET
l
l
l
l
l
Generation V Technology
Ultra Low On-Resistance
Complimentary Half Bridge
Surface Mount
Fully Avalanche Rated
S1
G1
S2
G2
N-CHANNEL MOSFET
1
8
D1
D1
D2
D2
N-Ch
V
DSS
30V
P-Ch
-30V
2
7
3
6
4
5
P-CHANNEL MOSFET
R
DS(on)
0.029鈩?0.058鈩?/div>
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques.
Top View
SO-8
Absolute Maximum Ratings ( T
A
= 25擄C Unless Otherwise Noted)
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
聟
T
A
= 25擄C
T
A
= 70擄C
V
DS
V
GS
N-Channel
30
7.3
5.9
30
2.5
2.5
1.6
82
4.0
0.20
3.8
-2.2
-55 to + 150 擄C
140
-2.8
Maximum
P-Channel
-30
鹵 20
-5.3
-4.2
-30
-2.5
Units
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
T
A
= 25擄C
Maximum Power Dissipation
聟
T
A
= 70擄C
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
聜
Junction and Storage Temperature Range
I
DM
I
S
A
W
mJ
A
mJ
V/ ns
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
聟
Symbol
R
胃JA
Limit
50
Units
擄C/W
www.irf.com
1
02/25/04

IRF7389 產(chǎn)品屬性

  • 95

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 陣列

  • HEXFET®

  • N 和 P 溝道

  • 邏輯電平門

  • 30V

  • 7.3A，5.3A

  • 29 毫歐 @ 5.8A，10V

  • 1V @ 250µA

  • 33nC @ 10V

  • 650pF @ 25V

  • 2.5W

  • 表面貼裝

  • 8-SOIC（0.154"，3.90mm 寬）

  • 8-SO

  • 管件

  • *IRF7389

IRF7389相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET
    INTERSIL
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET
    INTERSIL [...
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
    INTERSIL
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD
  • 英文版
    TRANSISTORS N-CHANNEL
    IRF
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD ...
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG [S...
  • 英文版
    TRANSISTORS N-CHANNEL
    IRF [Inter...
  • 英文版
    3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
    INTERSIL [...
  • 英文版
    TRANSISTORS N-CHANNEL
    IRF
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD

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