鈩?/div>
I
D
= 6.1A
HEXFET
廬
Power MOSFET
Reduced Gate Drive Requirement
Enhanced 30V V
GS
Rating
Reduced C
ISS
, C
OSS
, C
RSS
Extremely High Frequency Operation
Repetitive Avalanche Rated
Description
This new series of Low Charge HEXFETs achieve
significantly lower gate charge over conventional MOSFETs.
Utilizing the new LCDMOS technology, the device
improvements are achieved without added product cost,
allowing for reduced gate drive requirements and total
system savings. In addition, reduced switching losses and
improved efficiency are achievable in a variety of high
frequency applications. Frequencies of a few MHz at high
current are possible using the new Low Charge MOSFETs.
These device improvements combined with the proven
ruggedness and reliability that are characteristics of
HEXFETs offer the designer a new standard in power
transistors for switching applications.
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
6.1
3.9
24
74
0.59
鹵30
120
6.1
7.4
3.4
-55 to + 150
300 (1.6mm from case)
10 lbf鈥n (1.1N鈥)
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃
JC
R
胃
CS
R
胃
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Min.
鈥撯€撯€撯€?/div>
鈥撯€撯€撯€?/div>
鈥撯€撯€撯€?/div>
Typ.
鈥撯€撯€撯€?/div>
0.50
鈥撯€撯€撯€?/div>
Max.
1.7
next
IRF737LC 產(chǎn)品屬性
1,000
分離式半導(dǎo)體產(chǎn)品
FET - 單
-
MOSFET N 通道，金屬氧化物
標(biāo)準(zhǔn)型
300V
6.1A
750 毫歐 @ 3.7A，10V
4V @ 250µA
17nC @ 10V
430pF @ 25V
74W
通孔
TO-220-3
TO-220AB
管件
*IRF737LC
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英文版
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