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IRF7343QPBF Datasheet

  • IRF7343QPBF

  • HEXFET Power MOSFET

  • 10頁(yè)

  • IRF

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PD - 96110
IRF7343QPBF
l
l
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
150擄C Operating Temperature
Automotive [Q101] Qualified
Lead-Free
HEXFET
廬
Power MOSFET
D1
D1
D2
D2
S1
G1
S2
G2
N-CHANNEL MOSFET
1
8
2
3
4
7
N-Ch
V
DSS
55V
P-Ch
-55V
6
5
P-CHANNEL MOSFET
Top View
R
DS(on)
0.050鈩?0.105鈩?/div>
Description
Specifically designed for Automotive applications, these
HEXFET
廬
Power MOSFET's in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a
150擄C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These
benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and
a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available
in Tape & Reel.
SO-8
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
DM
P
D
@T
A
= 25擄C
P
D
@T
A
= 70擄C
E
AS
I
AR
E
AR
V
GS
dv/dt
T
J,
T
STG
Drain-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
聛
Maximum Power Dissipation
聟
Maximum Power Dissipation
聟
Single Pulse Avalanche Energy聝
Avalanche Current
Repetitive Avalanche Energy
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
聜
Junction and Storage Temperature Range
Max.
N-Channel
55
4.7
3.8
38
2.0
1.3
72
4.7
0.20
鹵 20
5.0
-55 to + 150
-5.0
114
-3.4
P-Channel
-55
-3.4
-2.7
-27
Units
V
A
W
W
mJ
A
mJ
V
V/ns
擄C
Thermal Resistance
R
胃JA
Maximum Junction-to-Ambient
聟
Parameter
Typ.
聳聳聳
Max.
62.5
Units
擄C/W
www.irf.com
1
07/23/07

IRF7343QPBF 產(chǎn)品屬性

  • International Rectifier

  • N and P-Channel

  • 55 V

  • 20 V

  • 4.7 A

  • 65 mOhms

  • SMD/SMT

  • SOIC-8

  • 24 nC

  • 2 W

IRF7343QPBF相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠(chǎng)商
    下載
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET
    INTERSIL
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET
    INTERSIL [...
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
    INTERSIL
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD
  • 英文版
    TRANSISTORS N-CHANNEL
    IRF
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD ...
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG [S...
  • 英文版
    TRANSISTORS N-CHANNEL
    IRF [Inter...
  • 英文版
    3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
    INTERSIL [...
  • 英文版
    TRANSISTORS N-CHANNEL
    IRF
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD

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