音影先锋亚洲天堂网|电影世界尽头的爱完整版播放|国产 熟女 91|高清无码免费观看欧美日韩|韩国一区二区三区黄色录像|美女亚洲加勒比在线|亚洲综合网 开心五月|7x成人在线入口|成人网站免费日韩毛片区|国产黄片?一级?二级?三级

IRF7341QTR Datasheet

  • IRF7341QTR

  • TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 55V V(BR)DS...

  • 9頁

  • ETC

掃碼查看芯片數(shù)據(jù)手冊

上傳產品規(guī)格書

PDF預覽

PD - 94391A
IRF7341Q
Typical Applications
鈥?/div>
Anti-lock Braking Systems (ABS)
鈥?/div>
Electronic Fuel Injection
鈥?/div>
Air bag
HEXFET
廬
Power MOSFET
V
DSS
55V
R
DS(on)
max
0.050@V
GS
= 10V
0.065@V
GS
= 4.5V
I
D
5.1A
4.42A
Benefits
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Advanced Process Technology
Dual N-Channel MOSFET
Ultra Low On-Resistance
175擄C Operating Temperature
Repetitive Avalanche Allowed up to Tjmax
Automotive [Q101] Qualified
S1
G1
S2
G2
1
Description
Specifically designed for Automotive applications, these
HEXFET 廬 Power MOSFET鈥檚 in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET鈥檚 are a 175擄C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These benefits com-
bine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety
of other applications.
The 175擄C rating for the SO-8 package provides improved
thermal performance with increased safe operating area and
dual MOSFET die capability make it ideal in a variety of
power applications. This dual, surface mount SO-8 can
dramatically reduce board space and is also available in
Tape & Reel.
8
D1
D1
D2
D2
2
7
3
6
4
5
Top V ie w
SO-8
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
DM
P
D
@T
A
= 25擄C
P
D
@T
A
= 70擄C
V
GS
E
AS
I
AR
E
AR
T
J
, T
STG
Drain-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Q
Maximum Power Dissipation
S
Maximum Power Dissipation
S
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche EnergyR
Avalanche CurrentQ
Repetitive Avalanche Energy
Junction and Storage Temperature Range
Max.
55
5.1
4.2
42
2.4
1.7
16
鹵 20
140
5.1
See Fig. 14, 15, 16
-55 to + 175
Units
V
A
W
W
mW/擄C
V
mJ
A
mJ
擄C
Thermal Resistance
R
胃JA
Max.
Maximum Junction-to-Ambient
S
Parameter
Units
62.5
擄C/W
www.irf.com
1
03/14/02

IRF7341QTR相關型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET
    INTERSIL
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET
    INTERSIL [...
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
    INTERSIL
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD
  • 英文版
    TRANSISTORS N-CHANNEL
    IRF
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD ...
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG [S...
  • 英文版
    TRANSISTORS N-CHANNEL
    IRF [Inter...
  • 英文版
    3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
    INTERSIL [...
  • 英文版
    TRANSISTORS N-CHANNEL
    IRF
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD

掃碼下載APP，
一鍵連接廣大的電子世界。

在線人工客服

買家服務：
賣家服務：
技術客服：

0571-85317607

網(wǎng)站技術支持

13606545031

客服在線時間周一至周五
9:00-17:30

關注官方微信號，
第一時間獲取資訊。

建議反饋

聯(lián)系人：

聯(lián)系方式：

按住滑塊，拖拽到最右邊
>>
感謝您向阿庫提出的寶貴意見，您的參與是維庫提升服務的動力！意見一經采納，將有感恩紅包奉上哦！