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IRF7338 Datasheet

  • IRF7338

  • HEXFET Power MOSFET

  • 193.17KB

  • 12頁

  • IRF

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PD - 94372C
IRF7338
HEXFET
Power MOSFET
l
l
l
l
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
S1
G1
S2
G2
N-CHANNEL MOSFET
1
8
2
7
D1
D1
N-Ch
V
DSS
12V
P-Ch
-12V
3
6
D2
D2
4
5
P-CHANNEL MOSFET
R
DS(on)
0.034鈩?0.150鈩?/div>
Top View
Description
These N and P channel MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
the extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
This Dual SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infrared, or wave soldering techniques.
SO-8
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
DM
P
D
@T
A
= 25擄C
P
D
@T
A
= 70擄C
V
GS
T
J,
T
STG
Drain-to-Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
N-Channel
12
6.3
5.2
26
2.0
1.3
16
鹵12
-55 to + 150
鹵 8.0
P-Channel
-12
-3.0
-2.5
-13
Units
A
W
mW/擄C
V
擄C
Thermal Resistance
Symbol
R
胃JL
R
胃JA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max.
20
62.5
Units
擄C/W
www.irf.com
1
6/2/03

IRF7338相關(guān)型號PDF文件下載

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  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
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    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
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    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
    INTERSIL
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD
  • 英文版
    TRANSISTORS N-CHANNEL
    IRF
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG
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    N-Channel Power MOSFETs, 3.0 A, 350-400 V
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    SAMSUNG [S...
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    TRANSISTORS N-CHANNEL
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    TRANSISTORS N-CHANNEL
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  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD

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