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PD- 94095A

HEXFET

廬

Power MOSFET

l

l

l

l

l

IRF7329

I

D

鹵

9.2A

鹵

7.4A

鹵

4.6A

Trench Technology

Ultra Low On-Resistance

Dual P-Channel MOSFET

Low Profile (<1.8mm)

Available in Tape & Reel

V

DSS

-12V

R

DS(on)

max (mW)

17@V

GS

= -4.5V

21@V

GS

= -2.5V

30@V

GS

= -1.8V

New P-Channel HEXFET

脪

power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance per

silicon area. This benefit, combined with the ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

Description

S1

G1

S2

G2

1

2

3

4

8

7

D1

D1

D2

D2

6

5

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements, multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infrared, or wave soldering techniques.

Top View

SO-8

Absolute Maximum Ratings

Parameter

V

DS

I

D

@ T

A

= 25擄C

I

D

@ T

A

= 70擄C

I

DM

P

D

@T

A

= 25擄C

P

D

@T

A

= 70擄C

V

GS

T

J,

T

STG

Drain- Source Voltage

Continuous Drain Current, V

GS

@ -4.5V

Continuous Drain Current, V

GS

@ -4.5V

Pulsed Drain Current

聛

Power Dissipation

聝

Power Dissipation

聝

Linear Derating Factor

Gate-to-Source Voltage

Junction and Storage Temperature Range

Max.

-12

-9.2

-7.4

-37

2.0

1.3

16

鹵 8.0

-55 to + 150

Units

V

A

W

mW/擄C

V

擄C

Thermal Resistance

Symbol

R

qJL

R

qJA

Parameter

Junction-to-Drain Lead

Junction-to-Ambient

聝

Typ.

聳聳聳

聳聳聳

Max.

20

62.5

Units

擄C/W

www.irf.com

1

01/29/04

next

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