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PD -94000

IRF7328

HEXFET

廬

Power MOSFET

q

q

q

q

Trench Technology

Ultra Low On-Resistance

Dual P-Channel MOSFET

Available in Tape & Reel

V

DSS

-30V

R

DS(on)

max

21m鈩V

GS

= -10V

32m鈩V

GS

= -4.5V

I

D

-8.0A

-6.8A

Description

New trench HEXFET

廬

Power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance

per silicon area. This benefit, combined with the

ruggedized device design that HEXFET power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in battery and load management applications.

S1

G1

S2

G2

1

8

D1

D1

D2

D2

2

7

3

6

4

5

T o p V ie w

SO-8

Absolute Maximum Ratings

Parameter

V

DS

I

D

@ T

A

= 25擄C

I

D

@ T

A

= 70擄C

I

DM

P

D

@T

A

= 25擄C

P

D

@T

A

= 70擄C

V

GS

T

J

, T

STG

Drain-Source Voltage

Continuous Drain Current, V

GS

@ -10V

Continuous Drain Current, V

GS

@ -10V

Pulsed Drain Current

聛

Maximum Power Dissipation

聝

Maximum Power Dissipation

聝

Linear Derating Factor

Gate-to-Source Voltage

Junction and Storage Temperature Range

Max.

-30

-8.0

-6.4

-32

2.0

1.3

16

鹵 20

-55 to + 150

Units

V

A

W

W

mW/擄C

V

擄C

Thermal Resistance

Parameter

R

胃JA

Maximum Junction-to-Ambient

聝

Max.

62.5

Units

擄C/W

www.irf.com

1

10/04/00

next

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